中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共14条,第1-10条 帮助

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Experimental study on the implementation method of short pulse laser in distance-selective imaging system 期刊论文  OAI收割
Optics and Laser Technology, 2024, 卷号: 171
作者:  
Wang, Chong;  Li, Miaomiao;  Yang, Jiahao;  Zhu, Bingli;  Han, Jianghao
  |  收藏  |  浏览/下载:29/0  |  提交时间:2023/12/26
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor 期刊论文  OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:  
Liu, MH (Liu, Mohan)[ 1,2 ];  Lu, W (Lu, Wu)[ 1 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1 ];  Li, XL (Li, Xiaolong)[ 1 ]
  |  收藏  |  浏览/下载:26/0  |  提交时间:2020/04/03
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文  OAI收割
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:  
Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao)
收藏  |  浏览/下载:26/0  |  提交时间:2017/09/14
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:  
Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei)
收藏  |  浏览/下载:29/0  |  提交时间:2015/07/11
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:  
Zhang, JX (Zhang Jin-Xin);  He, CH (He Chao-Hui);  Guo, HX (Guo Hong-Xia);  Tang, D (Tang Du);  Xiong, C (Xiong Cen)
  |  收藏  |  浏览/下载:16/0  |  提交时间:2018/02/01
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:  
Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei
收藏  |  浏览/下载:40/0  |  提交时间:2013/11/07
A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 期刊论文  OAI收割
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 5, 页码: 56103
作者:  
Sun Ya-Bin;  Fu Jun;  Xu Jun
收藏  |  浏览/下载:22/0  |  提交时间:2015/10/29
Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7, 页码: -
作者:  
Xi Shan-Bin;  Lu Wu;  Wang Zhi-Kuan;  Ren Di-Yuan;  Zhou Dong
收藏  |  浏览/下载:19/0  |  提交时间:2012/11/29
Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 23, 页码: 374-380
作者:  
Xi Shan-Bin;  Lu Wu;  Ren Di-Yuan;  Zhou Dong;  Wen Lin
收藏  |  浏览/下载:23/0  |  提交时间:2013/11/07
Temperature performance of the edge emitting transistor laser 期刊论文  OAI收割
applied physics letters, 2011, 卷号: 99, 期号: 1, 页码: 13503
Liang S; Zhu HL; Kong DH; Niu B; Zhao LJ; Wang W
收藏  |  浏览/下载:13/0  |  提交时间:2012/02/06