机构

• 新疆理化技术研究所 [8]
• 上海微系统与信息技术... [3]
• 国家空间科学中心 [1]
• 半导体研究所 [1]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2024 [1]
• 2019 [1]
• 2015 [2]
• 2014 [1]
• 2013 [2]
• 2012 [2]
• 更多

学科主题

• Physics [5]
• Applied; P... [1]
• Computer S... [1]
• Condensed ... [1]
• Electrical... [1]
• Engineerin... [1]
• 更多

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Experimental study on the implementation method of short pulse laser in distance-selective imaging system 期刊论文  OAI收割 Optics and Laser Technology, 2024, 卷号: 171 作者:  Wang, Chong;  Li, Miaomiao;  Yang, Jiahao;  Zhu, Bingli;  Han, Jianghao   |  收藏  |   Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8 作者:  Liu, MH (Liu, Mohan)[ 1,2 ];  Lu, W (Lu, Wu)[ 1 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1 ];  Li, XL (Li, Xiaolong)[ 1 ]   |  收藏  |   Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao) 收藏  |   Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11 作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei) 收藏  |   Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24 作者:  Zhang, JX (Zhang Jin-Xin);  He, CH (He Chao-Hui);  Guo, HX (Guo Hong-Xia);  Tang, D (Tang Du);  Xiong, C (Xiong Cen)   |  收藏  |   3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: - 作者:   收藏  |   A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 5, 页码: 56103 作者:  Sun Ya-Bin;  Fu Jun;  Xu Jun;  Wang Yu-Dong;  Zhou Wei 收藏  |   Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7, 页码: - 作者:  Xi Shan-Bin;  Lu Wu;  Wang Zhi-Kuan;  Ren Di-Yuan;  Zhou Dong 收藏  |   Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 23, 页码: 374-380 作者:  Xi Shan-Bin;  Lu Wu;  Ren Di-Yuan;  Zhou Dong;  Wen Lin 收藏  |   Temperature performance of the edge emitting transistor laser 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 99, 期号: 1, 页码: 13503 Liang S; Zhu HL; Kong DH; Niu B; Zhao LJ; Wang W 收藏  |