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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
新疆理化技术研究所 [8]
上海微系统与信息技术... [3]
国家空间科学中心 [1]
半导体研究所 [1]
西安光学精密机械研究... [1]
采集方式
OAI收割 [14]
内容类型
期刊论文 [14]
发表日期
2024 [1]
2019 [1]
2015 [2]
2014 [1]
2013 [2]
2012 [2]
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Physics [5]
Applied; P... [1]
Computer S... [1]
Condensed ... [1]
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浏览/检索结果:
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Experimental study on the implementation method of short pulse laser in distance-selective imaging system
期刊论文
OAI收割
Optics and Laser Technology, 2024, 卷号: 171
作者:
Wang, Chong
;
Li, Miaomiao
;
Yang, Jiahao
;
Zhu, Bingli
;
Han, Jianghao
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2023/12/26
Narrow pulse
Step recovery diode
Bipolar transistor
Laser diode
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
期刊论文
OAI收割
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Xiao, Y (Xiao Yao)
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2017/09/14
SiGe heterojunction bipolar transistor
single event effect
three-dimensional numerical simulation
laser microbeam experiment
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Wen, L (Wen Lin)
;
Cui, JW (Cui Jiang-Wei)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2015/07/11
SiGe heterojunction bipolar transistor
single event effect
hardening design
dummy collector
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:
Zhang, JX (Zhang Jin-Xin)
;
He, CH (He Chao-Hui)
;
Guo, HX (Guo Hong-Xia)
;
Tang, D (Tang Du)
;
Xiong, C (Xiong Cen)
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2018/02/01
Sige Heterojunction Bipolar Transistor
Different Bias
Single Event Effect
3d Numerical Simulation
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:
Zhang Jin-Xin
;
Guo Hong-Xia
;
Guo Qi
;
Wen Lin
;
Cui Jiang-Wei
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2013/11/07
SiGe heterojunction bipolar transistor
single event effect
charge collection
three-dimensional numerical simulation
A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor
期刊论文
OAI收割
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 5, 页码: 56103
作者:
Sun Ya-Bin
;
Fu Jun
;
Xu Jun
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2015/10/29
single event transient (SET)
pulsed laser
charge collection
SiGe heterojunction bipolar transistor (HBT)
Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7, 页码: -
作者:
Xi Shan-Bin
;
Lu Wu
;
Wang Zhi-Kuan
;
Ren Di-Yuan
;
Zhou Dong
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/11/29
subthreshold-current technique
gate control
lateral pnp bipolar transistor
charge separation
Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 23, 页码: 374-380
作者:
Xi Shan-Bin
;
Lu Wu
;
Ren Di-Yuan
;
Zhou Dong
;
Wen Lin
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/11/07
gate sweep technique
gate control
lateral PNP bipolar transistor
charge separation
Temperature performance of the edge emitting transistor laser
期刊论文
OAI收割
applied physics letters, 2011, 卷号: 99, 期号: 1, 页码: 13503
Liang S
;
Zhu HL
;
Kong DH
;
Niu B
;
Zhao LJ
;
Wang W
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
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