中国科学院机构知识库网格系统: 检索

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	Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文 OAI收割 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/08/12 scanning electron microscopy X-ray diffraction Metalorganic vapor phase epitaxy selective area growth gallium nitride CUBIC GAN OVERGROWN GAN DEPOSITION GAAS(100)
	Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates 期刊论文 iSwitch采集 Journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 作者: Shen, XM; Fu, Y; Feng, G; Zhang, BS; Feng, ZH 收藏 \| 浏览/下载：30/0 \| 提交时间：2019/05/12 Transmission electron microscopy X-ray diffraction Epitaxial lateral overgrowth Metalorganic vapor phase epitaxy Cubic gallium nitride
	ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文 OAI收割 plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174 Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG 收藏 \| 浏览/下载：93/7 \| 提交时间：2010/08/12 ECR plasma cubic GaN low pressure MOCVD MOLECULAR-BEAM EPITAXY CYCLOTRON-RESONANCE PLASMA LIGHT-EMITTING-DIODES VAPOR-PHASE EPITAXY GALLIUM NITRIDE GAAS DIMETHYLHYDRAZINE
	Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 Shen XM; Fu Y; Feng G; Zhang BS; Feng ZH; Wang YT; Yang H 收藏 \| 浏览/下载：55/0 \| 提交时间：2010/08/12 transmission electron microscopy X-ray diffraction epitaxial lateral overgrowth metalorganic vapor phase epitaxy cubic gallium nitride CHEMICAL-VAPOR-DEPOSITION CUBIC GAN PHASE EPITAXY REDUCTION GROWTH
	Dislocation filtering techniques for MBE large mismatched heteroepitaxy 期刊论文 OAI收割 PHYSICS AND APPLICATIONS OF SEMICONDUCTOR QUANTUM STRUCTURES, 2001, 页码: 88 Zhou, JM; Huang, Q; Chen, H; Peng, CS 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/09/17 MOLECULAR-BEAM EPITAXY STRAINED-LAYER SUPERLATTICES VAPOR-PHASE EPITAXY CUBIC GAN ELECTRON-MICROSCOPY GALLIUM NITRIDE BUFFER LAYERS THIN-FILMS 001 GAAS GROWTH
	The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 期刊论文 OAI收割 thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 237-240 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/08/12 metalorganic chemical vapor deposition cubic GaN hexagonal phase content 4-circle X-ray double crystal diffraction MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE THIN-FILMS SILICON GAAS
	The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文 OAI收割 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏 \| 浏览/下载：20/0 \| 提交时间：2010/11/15 metalorganic chemical vapor deposition cubic GaN hexagonal phase content 4-circle X-ray double crystal diffraction MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE THIN-FILMS SILICON GAAS
	MOCVD growth of cubic GaN: Materials and devices 会议论文 OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者: Zhao DG; Zhang SM 收藏 \| 浏览/下载：21/0 \| 提交时间：2010/10/29 MOCVD GaN InGaN cubic LED CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE PHASE EPITAXY INGAN FILMS ELECTROLUMINESCENCE ZINCBLENDE WURTZITE MBE
	Properties of cubic GaN grown by MBE 期刊论文 OAI收割 materials science and engineering b-solid state materials for advanced technology, 1997, 卷号: 43, 期号: 0, 页码: 215-221 Brandt O; Yang H; Mullhauser JR; Trampert A; Ploog KH 收藏 \| 浏览/下载：18/0 \| 提交时间：2010/11/17 cubic gallium arsenide film molecular beam epitaxy photoluminescence transmission electron microscopy MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE GAAS