机构

• 金属研究所 [2]
• 半导体研究所 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2010 [1]
• 2007 [1]
• 2006 [1]
• 2000 [2]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Current-Induced Interfacial Reactions in Sn Solder Joints with Electroplated FeNi/Cu Substrate 期刊论文  OAI收割 Journal of Electronic Materials, 2010, 卷号: 39, 期号: 3, 页码: 333-337 X. F. Zhang; J. D. Guo; J. K. Shang 收藏  |  浏览/下载：15/0  |  提交时间：2012/04/13 Polarity effect  current stressing  effective charge  FeNi  interfacial  reactions  thin-films  alloy  segregation  diffusion  kinetics   Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect 期刊论文  OAI收割 Journal of Electronic Materials, 2007, 卷号: 36, 期号: 10, 页码: 1372-1377 J. P. Daghfal; J. K. Shang 收藏  |  浏览/下载：7/0  |  提交时间：2012/04/13 in-Sn solder  electromigration  current stressing  hillocks  interface  mechanical-properties  microstructure  joints  electromigration  creep  bi   Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Zhang Z.-W. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit  the luminous uniformity has great improved  but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED  such as low field effect mobility  low output current and threshold voltage shift. In this article  a two-a-Si:H TFT pixel circuit was designed  which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing  the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments  the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal  the variety of Vth  is smallest  about 1.28V after a fixed stressing time of 1.33104min  which shows the novel data signal timing can improved the driving TFT output-input current stability.   Studies of high dc current induced degradation in iii-v nitride based heterojunctions 期刊论文  iSwitch采集 Ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 作者:  Ho, WY;  Surya, C;  Tong, KY;  Lu, LW;  Ge, WK 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Current stressing  Dlts  Flicker noise  Heterojunctions  Iii-v nitride   Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文  OAI收割 ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 Ho WY; Surya C; Tong KY; Lu LW; Ge WK 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 current stressing  DLTS  flicker noise  heterojunctions  III-V nitride  LOW-FREQUENCY FLUCTUATIONS  RESONANT-TUNNELING DIODES  FLICKER NOISE  GALLIUM NITRIDE  1/F NOISE  DEVICES  TRANSISTORS  QUALITY