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	Highly Selective and Sensitive Detection of Hydrogen Sulfide by the Diffraction Peak of Periodic Au Nanoparticle Array with Silver Coating 期刊论文 OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2020, 卷号: 12 作者: Li, Xuejiao; Zhang, Tao; Yu, Jie; Xing, Changchang; Li, Xinyang \| 收藏 \| 浏览/下载：73/0 \| 提交时间：2020/11/30 hydrogen sulfide array silver diffraction peak sensor
	Improved method of target detection on optoelectronic hybrid joint transform correlator in cluttered scences (EI CONFERENCE) 会议论文 OAI收割 2011 3rd International Conference on Mechanical and Electronics Engineering, ICMEE 2011, September 23, 2011 - September 25, 2011, Hefei, China 作者: Yang L.; Yang L. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 A classical joint transform correlator (JTC) usually yields large correlation sidelobes as well as a large correlation peak width strong zero-order peak and low diffraction efficiency which make the detection ability of JTC lower. To overcome these difficulties firstly a joint power spectrum (JPS) subtraction technique in Fourier plane was proposed where reference image power spectrum and object image power spectrum are subtracted from the JPS before inverse Fourier-transform operation it is obvious that the modified JPS removes the zero-order term. Secondly a fringe-adjusted filter (FAF) was presented to suppress sidelobes and noises. The modified JPS is multiplied by a FAF before the inverse Fourier-transform operation to obtain the cross-correlation peak. Computer simulations demonstrated the improved method can obviously remove zero-order diffraction and effectively suppress the sidelobes and noises compared with classic JTC and then improve the detection ability for JTC. Experimental results presented the sharp correlation peak and also confirmed the method effectiveness. (2012) Trans Tech Publications Switzerland.
	Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China Yang X.; Su S.; Yi X.; Mei T. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications Switzerland.
	ZnO films growth at different temperature on the substrate of Corning glass by MOCVD (EI CONFERENCE) 会议论文 OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者: Zhao J.; Gao X.; Wang C.; Tang W. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46 indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM). (2010) Trans Tech Publications.
	Resolution performance of extreme ultraviolet telescope (EI CONFERENCE) 会议论文 OAI收割 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, November 19, 2008 - November 21, 2008, Chengdu, China 作者: Yang L.; Chen B.; Chen B.; Liang J.-Q.; Ni Q.-L. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 Extreme Ultraviolet Telescope (EUT) will image solar corona in four EUV narrow bandpasses defined by multilayered coatings deposited on normal incidence optics. In order to make sure it will get sub-arcsecond angular resolution in the mission we have to test its resolution performance on ground. The EUT is aligned by Zygo interferometer first and a global wavefront error of 0.152 peak to valley is obtained ( = 632.8nm ). Because of the difficulty of angular resolution test for EUT at its operating wavelengths we test its optical performance at visible and UV band. The method is to place the resolution test-target on the focal plane of collimator and illuminate the target by visible and UV light espectively then the collimated light will go through EUT and image at focal plane on CCD. By analysis of the images obtained in experiments we conclude that the angular resolution of EUT is 1.22 at visible light ( = 570nm ) which is very close to diffraction limit (1.20) and according to these results we estimate that the operational wavelength resolution is better than 0.32 meets design requirements. While for UV light the angular resolution is 1.53 that is different from diffraction limit (0.53) the error comes mainly from large pixel of EUV camera. 2009 SPIE.
	ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文 OAI收割 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：155/0 \| 提交时间：2013/03/25 ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1 2 3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50 indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.
	Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 OAI收割 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：37/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.