中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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直流磁控溅射制备TiAlCN薄膜及其性能研究 期刊论文  OAI收割
摩擦学学报, 2013, 卷号: 33, 期号: 1, 页码: 85-90
作者:  
郑建云;  郝俊英;  刘小强;  龚秋雨;  刘维民
收藏  |  浏览/下载:103/0  |  提交时间:2013/12/18
Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
作者:  
Zhang J.;  Li B.;  Li B.;  Li B.;  Zhao Y.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..  
氧化铋薄膜用于蓝光可录存储的研究 期刊论文  OAI收割
Chin. Opt. Lett., 2008, 卷号: 6, 期号: 4, 页码: 294, 296
蒋志; 耿永友; 顾冬红
收藏  |  浏览/下载:1264/211  |  提交时间:2009/09/22
基底温度对直流磁控溅射ITO透明导电薄膜性能的影响 期刊论文  OAI收割
中国激光, 2008, 卷号: 35, 期号: 12, 页码: 2031, 2035
曾维强; 姚建可; 贺洪波; 邵建达
收藏  |  浏览/下载:1400/170  |  提交时间:2009/09/22
非晶碳膜的PVD法制备、离子注入改性及其摩擦学性能研究 学位论文  OAI收割
理学硕士: 中国科学院兰州化学物理研究所, 2002
韩修训
收藏  |  浏览/下载:84/0  |  提交时间:2014/04/14