机构

• 半导体研究所 [4]
• 金属研究所 [1]
• 化学研究所 [1]
• 高能物理研究所 [1]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [2]

内容类型

• 期刊论文 [8]

发表日期

• 2016 [1]
• 2010 [1]
• 2006 [5]
• 1995 [1]

学科主题

• Physics [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序作者升序作者降序题名升序题名降序发表日期升序发表日期降序 High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode 期刊论文  OAI收割 NANO LETTERS, 2016, 卷号: 16, 期号: 6, 页码: 3600-3606 作者:  Jia, Chuancheng;  Ma, Wei;  Gu, Chunhui;  Chen, Hongliang;  Yu, Haomiao 收藏  |  浏览/下载：29/0  |  提交时间：2017/01/18 Graphene  photovoltaics  interface  electron tunnelling   Identification of metal-cage coupling in a single metallofullerene by inelastic electron tunneling spectroscopy 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 25, 页码: 253110 作者:  Jiang, J;  Gao B(高斌);  Gao, B;  Hu, ZP;  Lu, W 收藏  |  浏览/下载：32/0  |  提交时间：2016/06/29 density functional theory  electron density  electron-phonon interactions  fullerene compounds  tunnelling spectra   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 作者:  Ma Long;  Huang Ying-Long;  Zhang Yang;  Yang Fu-Hua;  Wang Liang-Chen 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/12 Resonant tunnelling diode (rtd)  High electron mobility transistor (hemt)  Molecular beam epitaxy (mbe)  Bistability  Self-latching   Nanoelectronic devices-resonant tunnelling diodes grown on inp substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Inp substrate  Molecular beam epitaxy  High resolution transmission electron microscope   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  OAI收割 CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP   |  收藏  |  浏览/下载：31/0  |  提交时间：2021/02/02 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 resonant tunnelling diode (RTD)  high electron mobility transistor (HEMT)  molecular beam epitaxy (MBE)  bistability  self-latching   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang Y 收藏  |  浏览/下载：67/0  |  提交时间：2010/04/11 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  CURRENT-VOLTAGE CHARACTERISTICS  INTRINSIC BISTABILITY  CIRCUIT   A COMPARATIVE-STUDY ON STM IMAGING AND ELECTROCATALYTIC ACTIVITY OF DIFFERENT SURFACES MODIFIED WITH FLAVIN ADENINE-DINUCLEOTIDE 期刊论文  OAI收割 electrochimica acta, 1995, 卷号: 40, 期号: 6, 页码: 733-744 ZHANG JD; CHI QJ; WANG EK; DONG SJ 收藏  |  浏览/下载：26/0  |  提交时间：2010/12/30 SCANNING-TUNNELING MICROSCOPY  ORIENTED PYROLYTIC-GRAPHITE  GLASSY-CARBON  TUNNELLING MICROSCOPY  ELECTRON-TRANSFER  PLATINUM  IMAGES  BIOMOLECULES  HEMOGLOBIN  OXIDATION