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浏览/检索结果: 共7条，第1-7条 帮助

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Static spectroscopic ellipsometer based on division-of-amplitude polarization demodulation 期刊论文  OAI收割
Optics Communications, 2024, 卷号: 552
作者:  Li, Siyuan;  Deng, Zhongxun;  Quan, Naicheng;  Zhang, Chunmin
  |  收藏  |  浏览/下载：23/0  |  提交时间：2023/11/23
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
椭偏仪的研究进展 期刊论文  OAI收割
激光与光电子学进展, 2007, 卷号: 44, 期号: 3, 页码: 43, 49
杨坤; 王向朝; 步扬
收藏  |  浏览/下载：932/164  |  提交时间：2009/09/18
Studies on the reactive polyvinylidene fluoride-polyamide 6 interfaces: rheological properties and interfacial width 期刊论文  OAI收割
POLYMER, 2005, 卷号: 46, 期号: 7, 页码: 2365-2371
作者:  Wu, Y;  Yu, XB;  Yang, YM;  Li, BY;  Han, YC
  |  收藏  |  浏览/下载：22/0  |  提交时间：2019/04/09
Dynamic storage performance of two cyanine dye films and optimization design for a recordable compact disk 期刊论文  OAI收割
appl. optics, 2000, 卷号: 39, 期号: 20, 页码: 3525, 3530
Li J; 干福熹
收藏  |  浏览/下载：1516/273  |  提交时间：2009/09/22
Oscillation of polar Kerr rotation in PtCu/Co multilayers 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 1998, 卷号: 83, 期号: 8, 页码: 4442
Li, J; Ma, PP; Wang, YJ; Guo, ZH; Chen, JC; Chen, LY; Zhang, RJ
收藏  |  浏览/下载：21/0  |  提交时间：2013/09/24
大视场成像椭偏仪及其应用研究 学位论文  OAI收割
作者:  谷利元
  |  收藏  |  浏览/下载：41/0  |  提交时间：2018/12/26