机构

• 长春光学精密机械与物... [6]
• 半导体研究所 [4]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [10]
• iSwitch采集 [1]

内容类型

• 期刊论文 [6]
• 会议论文 [5]

发表日期

• 2018 [1]
• 2010 [2]
• 2008 [2]
• 2007 [1]
• 2006 [1]
• 2005 [2]
• 更多

学科主题

• 光电子学 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文  OAI收割 ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902 作者:  Wu, Jian;  Ning, Yongqiang;  Zhang, Xing;  Zheng, Ming;  Lu, Wei   |  收藏  |  浏览/下载：60/0  |  提交时间：2019/05/22 tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands   Theoretical analysis of emission characteristics of second-order distributed feedback semiconductor lasers (EI CONFERENCE) 会议论文  OAI收割 Semiconductor Lasers and Applications IV, October 18, 2010 - October 19, 2010, Beijing, China 作者:  Liu Y.;  Liu Y.;  Qin L.;  Liu Y.;  Wang L. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 Based on the modified coupled-wave theory  the emission characteristics  including threshold gain  photon density distribution in the cavity  and external differential quantum efficiency for second-order DFB lasers are investigated. Numerical simulation results show that for given device structure with wavelength of 1.55 m  the feedback coupling coefficient and the surface radiation coupling coefficient of the second-order grating have great influence on the emission characteristics of the device. By choosing different duty cycles of the grating  we can change the two coupling coefficients  which affect the emission characteristics. For an overall consideration  an optimal duty cycle of 0.43 is chosen. The optimized results show that the device works without degeneracy modes and spatial burning hole. Besides  the side-mode suppress ratio (SMSR) and external differential quantum efficiency reach as high as 42 dB and 47%  respectively. 2010 SPIE.   Efficiency of pump absorption in gain-guided and index-antiguided (GG-IAG) fiber 期刊论文  OAI收割 journal of modern optics, 2010, 卷号: 57, 期号: 6, 页码: 480-484 作者:  Yan, Kun-Lun;  Zhou, En-Yu;  Wei, Wei;  Peng, Bo 收藏  |  浏览/下载：34/0  |  提交时间：2015/09/11 gain-guided index-antiguided (GG-IAG) fiber  3D ray-trace  absorption characteristics   Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers 期刊论文  iSwitch采集 Ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862 作者:  Cao, Yulian;  Yang, Tao;  Ji, Haiming;  Ma, Wenquan;  Cao, Qing 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Characteristics temperature  P-doped  Quantum-dot (qd) laser  Saturation modal gain   Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文  OAI收割 ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862 作者:  Yang T;  Cao YL;  Ma WQ 收藏  |  浏览/下载：251/72  |  提交时间：2010/03/08 Characteristics temperature  p-doped  quantum-dot (QD) laser  saturation modal gain   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   Low threshold field electron emission of diamond films (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu L.;  Wang W.;  Wang W.;  Li M.;  Liu L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Since CVD diamond film possesses desirable properties  it has been widely investigated  and much research has been made in this field. In this experiment  we mainly studied the characteristics of field emission from the CVD diamond films. The motivation for the experiment is to gain some insight into a possible emission mechanism. The diamond films are grown using a hot filament chemical vapor deposition  basing on the diamond micro-grits on silicon substrates. And the diamond micro-grits are deposited on silicon substrates using electrophoresis coat method  through a solution of diamond micro-grits in ethyl alcohol. This study has revealed that emission can be obtained at fields as low as 1.8V/m. And the field emission measurements were carried out at a pressure of 10-4Pa.   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.   Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Qin L.;  Jiang H.;  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 We describe design  numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm  and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure  drawing on the advantages of both. With periodical gain element structure  optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results  and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.   Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文  OAI收割 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏  |  浏览/下载：79/0  |  提交时间：2010/08/12 1.3 MU-M  MOLECULAR-BEAM EPITAXY  TEMPERATURE-DEPENDENCE  LASING CHARACTERISTICS  LASERS  WAVELENGTH  SEPARATION  LINEWIDTH  PROPERTY  GAIN