消息
×
loading..
中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
长春光学精密机械与物... [6]
半导体研究所 [4]
西安光学精密机械研究... [1]
采集方式
OAI收割 [10]
iSwitch采集 [1]
内容类型
期刊论文 [6]
会议论文 [5]
发表日期
2018 [1]
2010 [2]
2008 [2]
2007 [1]
2006 [1]
2005 [2]
更多
学科主题
光电子学 [1]
半导体材料 [1]
半导体物理 [1]
筛选
浏览/检索结果:
共11条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance
期刊论文
OAI收割
ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902
作者:
Wu, Jian
;
Ning, Yongqiang
;
Zhang, Xing
;
Zheng, Ming
;
Lu, Wei
|
收藏
|
浏览/下载:60/0
|
提交时间:2019/05/22
tunable semiconductor lasers
well-island composite quantum-confined structure
In GaAs/GaAs material
gain characteristics
flat top
indium-rich islands
Theoretical analysis of emission characteristics of second-order distributed feedback semiconductor lasers (EI CONFERENCE)
会议论文
OAI收割
Semiconductor Lasers and Applications IV, October 18, 2010 - October 19, 2010, Beijing, China
作者:
Liu Y.
;
Liu Y.
;
Qin L.
收藏
|
浏览/下载:31/0
|
提交时间:2013/03/25
Based on the modified coupled-wave theory
the emission characteristics
including threshold gain
photon density distribution in the cavity
and external differential quantum efficiency for second-order DFB lasers are investigated. Numerical simulation results show that for given device structure with wavelength of 1.55 m
the feedback coupling coefficient and the surface radiation coupling coefficient of the second-order grating have great influence on the emission characteristics of the device. By choosing different duty cycles of the grating
we can change the two coupling coefficients
which affect the emission characteristics. For an overall consideration
an optimal duty cycle of 0.43 is chosen. The optimized results show that the device works without degeneracy modes and spatial burning hole. Besides
the side-mode suppress ratio (SMSR) and external differential quantum efficiency reach as high as 42 dB and 47%
respectively. 2010 SPIE.
Efficiency of pump absorption in gain-guided and index-antiguided (GG-IAG) fiber
期刊论文
OAI收割
journal of modern optics, 2010, 卷号: 57, 期号: 6, 页码: 480-484
作者:
Yan, Kun-Lun
;
Zhou, En-Yu
;
Wei, Wei
;
Peng, Bo
收藏
|
浏览/下载:34/0
|
提交时间:2015/09/11
gain-guided index-antiguided (GG-IAG) fiber
3D ray-trace
absorption characteristics
Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers
期刊论文
iSwitch采集
Ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:
Cao, Yulian
;
Yang, Tao
;
Ji, Haiming
收藏
|
浏览/下载:26/0
|
提交时间:2019/05/12
Characteristics temperature
P-doped
Quantum-dot (qd) laser
Saturation modal gain
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers
期刊论文
OAI收割
ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:
Yang T
;
Cao YL
;
Ma WQ
收藏
|
浏览/下载:251/72
|
提交时间:2010/03/08
Characteristics temperature
p-doped
quantum-dot (QD) laser
saturation modal gain
High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Changling Y.
;
Guoguang L.
;
Chunfeng H.
;
Li Q.
收藏
|
浏览/下载:20/0
|
提交时间:2013/03/25
High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology
the devices have been fabricated in experiment
and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W
and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
Low threshold field electron emission of diamond films (EI CONFERENCE)
会议论文
OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Liu L.
;
Wang W.
;
Wang W.
;
Li M.
;
Liu L.
收藏
|
浏览/下载:23/0
|
提交时间:2013/03/25
Since CVD diamond film possesses desirable properties
it has been widely investigated
and much research has been made in this field. In this experiment
we mainly studied the characteristics of field emission from the CVD diamond films. The motivation for the experiment is to gain some insight into a possible emission mechanism. The diamond films are grown using a hot filament chemical vapor deposition
basing on the diamond micro-grits on silicon substrates. And the diamond micro-grits are deposited on silicon substrates using electrophoresis coat method
through a solution of diamond micro-grits in ethyl alcohol. This study has revealed that emission can be obtained at fields as low as 1.8V/m. And the field emission measurements were carried out at a pressure of 10-4Pa.
Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China
作者:
Wang L.
;
Wang L.
;
Wang L.
收藏
|
浏览/下载:21/0
|
提交时间:2013/03/25
Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission
amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm
dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.
Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者:
Qin L.
;
Jiang H.
;
Wang L.
;
Wang L.
;
Wang L.
收藏
|
浏览/下载:24/0
|
提交时间:2013/03/25
We describe design
numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm
and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure
drawing on the advantages of both. With periodical gain element structure
optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results
and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.
Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer
期刊论文
OAI收割
chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063
Fang ZD
;
Gong Z
;
Miao ZH
;
Xu XH
;
Ni HQ
;
Niu ZC
收藏
|
浏览/下载:79/0
|
提交时间:2010/08/12
1.3 MU-M
MOLECULAR-BEAM EPITAXY
TEMPERATURE-DEPENDENCE
LASING CHARACTERISTICS
LASERS
WAVELENGTH
SEPARATION
LINEWIDTH
PROPERTY
GAIN
首页
上一页
1
2
下一页
末页