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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共11条,第1-10条 帮助

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InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文  OAI收割
ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902
作者:  
Wu, Jian;  Ning, Yongqiang;  Zhang, Xing;  Zheng, Ming;  Lu, Wei
  |  收藏  |  浏览/下载:60/0  |  提交时间:2019/05/22
Theoretical analysis of emission characteristics of second-order distributed feedback semiconductor lasers (EI CONFERENCE) 会议论文  OAI收割
Semiconductor Lasers and Applications IV, October 18, 2010 - October 19, 2010, Beijing, China
作者:  
Liu Y.;  Liu Y.;  Qin L.
收藏  |  浏览/下载:31/0  |  提交时间:2013/03/25
Based on the modified coupled-wave theory  the emission characteristics  including threshold gain  photon density distribution in the cavity  and external differential quantum efficiency for second-order DFB lasers are investigated. Numerical simulation results show that for given device structure with wavelength of 1.55 m  the feedback coupling coefficient and the surface radiation coupling coefficient of the second-order grating have great influence on the emission characteristics of the device. By choosing different duty cycles of the grating  we can change the two coupling coefficients  which affect the emission characteristics. For an overall consideration  an optimal duty cycle of 0.43 is chosen. The optimized results show that the device works without degeneracy modes and spatial burning hole. Besides  the side-mode suppress ratio (SMSR) and external differential quantum efficiency reach as high as 42 dB and 47%  respectively. 2010 SPIE.  
Efficiency of pump absorption in gain-guided and index-antiguided (GG-IAG) fiber 期刊论文  OAI收割
journal of modern optics, 2010, 卷号: 57, 期号: 6, 页码: 480-484
作者:  
Yan, Kun-Lun;  Zhou, En-Yu;  Wei, Wei;  Peng, Bo
收藏  |  浏览/下载:34/0  |  提交时间:2015/09/11
Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-mu m inas-gaas quantum-dot lasers 期刊论文  iSwitch采集
Ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  
Cao, Yulian;  Yang, Tao;  Ji, Haiming
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
Temperature Sensitivity Dependence on Cavity Length in p-Type Doped and Undoped 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文  OAI收割
ieee photonics technology letters, 2008, 卷号: 20, 期号: 21-24, 页码: 1860-1862
作者:  
Yang T;  Cao YL;  Ma WQ
收藏  |  浏览/下载:251/72  |  提交时间:2010/03/08
High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Changling Y.; Guoguang L.; Chunfeng H.; Li Q.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
Low threshold field electron emission of diamond films (EI CONFERENCE) 会议论文  OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu L.;  Wang W.;  Wang W.;  Li M.;  Liu L.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China
作者:  
Wang L.;  Wang L.;  Wang L.
收藏  |  浏览/下载:21/0  |  提交时间:2013/03/25
Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者:  
Qin L.;  Jiang H.;  Wang L.;  Wang L.;  Wang L.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文  OAI收割
chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063
Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC
收藏  |  浏览/下载:79/0  |  提交时间:2010/08/12
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