中国科学院机构知识库网格系统: 检索

Spectroscopic properties of new Yb3+-doped TeO2-ZnO-Nb2O5 based tellurite glasses with high emission cross-section 期刊论文 OAI收割
optical materials, 2012, 卷号: 34, 期号: 9, 页码: 1549-1552
作者: Wang, Cuicui; Wang, Pengfei; Zheng, Ruilin; Xu, Shennuo; Wei, Wei

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Tellurite based glass Absorption spectrum Emission cross-section Gain property

基于电光调制的激光光谱整形技术 期刊论文 OAI收割
Chin. Opt. Lett., 2008, 卷号: 6, 期号: 11, 页码: 841, 844
王艳海; 王江峰; 姜有恩; 鲍岩; 李学春; 林尊琪

收藏 | 浏览/下载：1292/335 | 提交时间：2009/09/18

啁啾脉冲放大增益窄化光谱整形电光波导调制器孔径耦合带状线 Chirped laser pulses Chirped pulse amplification systems Chirped pulses Frequency intervals Gain narrowing Integrated waveguides Optic modulations Optical- Phase errors Pulse shapes Pulse spectrums Spectral shaping Spectrum shaping Strip lines Time domains Time intervals Waveform generators

The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J.

收藏 | 浏览/下载：25/0 | 提交时间：2013/03/25

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.

Optical thin films for high power LD-pumped Nd:YVO4 457nm blue laser (EI CONFERENCE) 会议论文 OAI收割
ICO20: Optical Design and Fabrication, August 21, 2005 - August 26, 2005, Changchun, China
Bu Y.; Zheng Q.; Xue Q.; Qian L.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

The expanding field of LD-pumped solid state lasers forms an extraordinary challenge for developing the optical coatings. Optical thin films for LD-pumped Nd:YVO4/LBO blue laser at 457nm was presented in this paper based on lower gain laser line action theory including spectral beam dividers and doubling antireflecting multilayer coatings. To achieve 914nm laser action and 457nm blue light high output power the coating specifications of laser resonator was analyzed. The transmittance/reflectance spectrum request was effectively separated by adopting high tuned radio stack simultaneously the spectrum request was reasonably distributed on the two resonator facet reflectivity for restrain the other laser lines such as1064nm and1342nm. The dielectric high reflective laser mirror and antireflecting coatings for 457nm laser were manufactured by double ion beam sputtering technique which is controlled by a time-power monitoring. Using type-I critical phase-matching LBO crystal 457nm blue laser is obtained by 914nm intracavity frequency doubling. The maximum laser output power of 1.5W is obtained when incident pump laser of 15W is used.

Spectroscopic investigations of Er3+ doped Bi2O 3 -B2O3 -SiO2 glass (EI CONFERENCE) 会议论文 OAI收割
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
作者: Chen B.; Wang X.; Wang X.; Wang X.; Wang C.

收藏 | 浏览/下载：75/0 | 提交时间：2013/03/25

From the optical absorption measurements the Judd-Ofelt parameters were computed using Judd-Ofelt theory. According to the radiative lifetime obtained from the Judd-Ofelt parameters and the measured lifetime the 1.5m quantum efficiency was calculated. The quenching effect of OH upon the lifetime of 1.5m emission was investigated. From the absorption sideband measurement of glass host the value of optical band gap was estimated. The McCumber theory was used to calculate the stimulated emission cross-section and in approximate agreement with experimental one if the emission spectrum could be obtained accurately. The gain coefficient spectra were computed.

Study of removing striping noise in CCD image (EI CONFERENCE) 会议论文 OAI收割
ICO20: Optical Information Processing, August 21, 2005 - August 26, 2005, Changchun, China
作者:

收藏 | 浏览/下载：17/0 | 提交时间：2013/03/25

Striping noise is the common system noise during formation of image using linear array CCD and has the character of periodicity directivity and banding distributing. It can be caused by errors in internal calibration devices or by slight gain/offset differences among the elements that conform the array of detectors. Striping noise covers up useful information in CCD image and brings adverse effect to image interpretation. On the basis of analyzing wavelet decomposed coefficient the regularities of distribution about striping noise in wavelet coefficient is found thereby the method of wavelet threshold selection which is suitable to striping noise distribution is put forward. According to Donoho's method about denoising using wavelet the image including striping noise is processed. Comparing the power spectrum of processed image with the one of original image polluted by striping noise in frequency field we find pulse brought by striping noise is removed and the goal which reserves image details and reduces stripes is achieved.

Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval 期刊论文 iSwitch采集
Ieee photonics technology letters, 2003, 卷号: 15, 期号: 11, 页码: 1510-1512
作者: Guo, WH; Lu, QY; Huang, YZ; Yu, LJ

收藏 | 浏览/下载：15/0 | 提交时间：2019/05/12

Gain measurement Optical spectrum analyzer (osa) Semiconductor lasers

Measurement of gain spectrum for fabry-perot semiconductor lasers by the fourier transform method with a deconvolution process 期刊论文 iSwitch采集
Ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 6, 页码: 716-721
作者:

收藏 | 浏览/下载：19/0 | 提交时间：2019/05/12

Fourier transform method Gain measurement Optical spectrum analyzer (osa) Semiconductor laser

Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval 期刊论文 OAI收割
ieee photonics technology letters, 2003, 卷号: 15, 期号: 11, 页码: 1510-1512
作者: Yu LJ

收藏 | 浏览/下载：615/10 | 提交时间：2010/08/12

gain measurement optical spectrum analyzer (OSA) semiconductor lasers DIODES

Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process 期刊论文 OAI收割
ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 6, 页码: 716-721
作者: Yu LJ

收藏 | 浏览/下载：42/0 | 提交时间：2010/08/12

Fourier transform method gain measurement optical spectrum analyzer (OSA) semiconductor laser EMISSION-SPECTRA DIODES