中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共7条,第1-7条 帮助

条数/页: 排序方式:
Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, May 24, 2011 - May 26, 2011, Beijing, China
Tan X.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
In ultraviolet spectroscopy  groove irregularity and surface roughness of nanometer magnitude can cause a significant loss of diffraction efficiency. Therefore  there is a constant need to improve the diffraction efficiency. A blazed grating can concentrate most of the light intensity into a desired diffraction order  it is important to control the groove shape precisely  so it is the optimum choice among gratings of different kinds of profile. As the operating wavelength of most UV spectral applications is less than 200 nm  especially the blaze angle and the apical angle. We have presented a direct shaping method to fabricate EUV blazed gratings by using an ion-beam mixture of Ar+ and CHF2 +to etch K9 glass with a rectangular photoresist mask. With this method  the required blaze angle is small  we have succeeded in fabricating well-shaped UV blazed gratings with a 1200 line/mm groove density and 8.54 blaze angles and 1200 line/mm groove density and 11.68 blaze angles  and the metrical efficiency is about 81% and 78%. The good performance of the gratings was verified by diffraction efficiency measurements. When one uses the etching model  the conditions on the ion-beam grazing incident angle and the CHF3partial pressure should be noted. Besides  since the etched groove shape depends on the aspect ratio of the photoresist mask ridge  if we wish to fabricate larger gratings with this method  we must improve the uniformity of the photoresist mask before ion-beam etching. 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).  
Crystallization and microstructure change of semiconductor active thin layer in polymer organic field-effect transistors 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 2, 页码: 27201
作者:  
Tian, XY;  Zhao, SL;  Xu, Z;  Yao, JF;  Zhang, FJ
收藏  |  浏览/下载:26/0  |  提交时间:2016/06/29
Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: 57201
作者:  
Tian, XY;  Zhao, SL;  Xu, Z;  Yao, JF;  Zhang, FJ
收藏  |  浏览/下载:41/0  |  提交时间:2016/06/29
High resolution X-ray diffraction investigation of epitaxially grown SrTiO3 thin films by laser-MBE 期刊论文  OAI收割
CHINESE PHYSICS C, 2009, 卷号: 33, 期号: 11, 页码: 949-953
作者:  
Zhai, ZY;  Wu, XS;  Jia QJ(贾全杰);  Jia, QJ
收藏  |  浏览/下载:29/0  |  提交时间:2016/06/29
High resolution X-ray diffraction investigation of epitaxially grown SrTiO_3 thin films by laser-MBE 期刊论文  OAI收割
中国物理C, 2009, 期号: 11, 页码: 949-953
作者:  
Zhai ZY(翟章印);  Wu XS(吴小山);  Jia QJ(贾全杰)
收藏  |  浏览/下载:18/0  |  提交时间:2015/12/25
Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction 期刊论文  OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 卷号: 467, 期号: 1, 页码: 362-365
作者:  
Jiang XM(姜晓明);  Jia QJ(贾全杰);  Zheng WL(郑文莉);  Xian DC(冼鼎昌);  Jiang, XX
收藏  |  浏览/下载:16/0  |  提交时间:2016/06/27
Development of synchrotron radiation X-ray grazing incident diffraction method 期刊论文  OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2000, 卷号: 24, 期号: 12, 页码: 1185-1190
作者:  
Jiang XM(姜晓明);  Jia QJ(贾全杰);  Zheng WL(郑文莉);  刘鹏(多);  Xian DC(冼鼎昌)
收藏  |  浏览/下载:40/0  |  提交时间:2016/06/29