中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共7条,第1-7条 帮助

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Multifunctional Heterocyclic-Based Spacer Cation for Efficient and Stable 2D/3D Perovskite Solar Cells 期刊论文  OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2022
作者:  
Zheng, Haiying;  Dong, Xinhe;  Wu, Weiwei;  Liu, Guozhen;  Pan, Xu
  |  收藏  |  浏览/下载:48/0  |  提交时间:2022/03/28
Electrically pumped organic laser device with a coupled microcavity structure (EI CONFERENCE) 会议论文  OAI收割
Organic Light Emitting Materials and Devices XVI, August 12, 2012 - August 15, 2012, San Diego, CA, United states
作者:  
Li Y.;  Li Y.;  Li Y.;  Li Y.;  Lin J.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
The research of digltal CR medicine image adapitive enhancement method (EI CONFERENCE) 会议论文  OAI收割
4th International Conference on Mechanical and Electrical Technology, ICMET 2012, July 24, 2012 - July 26, 2012, Kuala Lumpur, Malaysia
Ming-Hui Z.; Yao-Yu Z.
收藏  |  浏览/下载:66/0  |  提交时间:2013/03/25
Digital CR medicine radiation image is in doctor's favor and has became medicine imaging technology new hot spot because of its high gray contrast  powerful computer disposal function  little radiation dosage  non-film diagnosis  different area consultation. But degradation of digital X-ray medical image such as low contrast and blurring during radiographic imaging  caused by complexity of body tissue and effects of X-ray scattering and electrical noise etc.  can worsen the results of analysis and diagnosis. So it is usually needed that CR medicine image is enhanced to improve its vision quality  and easy to doctor's more accurate diagnosis. The general enhancement algorithms over enhancing the contrast and lose image details  aiming at the defects  an enhancement algorithm for CR image is proposed based on the ratio of deviation to mean of domain. The arithmetic enhance CR image edge details by adjusting factor K based on the ratio of deviation to mean of domain of CR image. Experiment results demonstrate that the algorithm enhances CR image detail and CR image enhanced has good visual effect  the adaptive enhancement method is fit for CR medicine image. (2012) Trans Tech Publications  Switzerland.  
Surface modification of SiC mirror by IARE method (EI CONFERENCE) 会议论文  OAI收割
7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010, Shanghai, China
作者:  
Gao J.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects. This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense  homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm  the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective. 2011 SPIE.  
Efficient Preparation of Large-Area Graphene Oxide Sheets for Transparent Conductive Films 期刊论文  OAI收割
Acs Nano, 2010, 卷号: 4, 期号: 9, 页码: 5245-5252
J. P. Zhao; S. F. Pei; W. C. Ren; L. B. Gao; H. M. Cheng
收藏  |  浏览/下载:33/0  |  提交时间:2012/04/13
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:37/0  |  提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.