机构

• 半导体研究所 [6]
• 物理研究所 [2]
• 长春光学精密机械与物... [2]
• 高能物理研究所 [2]
• 上海微系统与信息技术... [1]
• 合肥物质科学研究院 [1]
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采集方式

• OAI收割 [13]
• iSwitch采集 [2]

内容类型

• 期刊论文 [12]
• 会议论文 [3]

发表日期

• 2024 [1]
• 2018 [3]
• 2009 [1]
• 2008 [1]
• 2006 [2]
• 2004 [1]
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学科主题

• 半导体器件 [2]
• Chemistry;... [1]
• Physics, A... [1]
• 半导体化学 [1]
• 半导体材料 [1]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Room-temperature MoTe2/InSb heterostructure large-area terahertz detector 期刊论文  OAI收割 Infrared Physics and Technology, 2024, 卷号: 137 作者:  Wang, Jiatong;  Zhang, Min;  Zhou, Zhiwen;  Li, Ling;  Song, Qi   |  收藏  |  浏览/下载：31/0  |  提交时间：2024/03/13 Terahertz detector  Heterostructure  Interdigital electrodes   A 15-pole high temperature superconductor filter for radar applications 期刊论文  OAI收割 SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2018, 卷号: 31, 期号: 6, 页码: 5 作者:  Yu, Xiao;  Xi, Weibin;  Wu, Songtao   |  收藏  |  浏览/下载：26/0  |  提交时间：2019/06/03 HTS filter  high selective  high first harmonic frequency  interdigital structure resonator   Impact of device parameters on performance of one-port type saw resonators on aln/sapphire 期刊论文  iSwitch采集 Journal of micromechanics and microengineering, 2018, 卷号: 28, 期号: 8 作者:   收藏  |  浏览/下载：101/0  |  提交时间：2019/05/12 Surface acoustic wave  Aln films  Device parameters  Electromechanical coupling coefficient  Interdigital transducers   Modified design of microstrip interdigital filter with tapped line 期刊论文  OAI收割 PROCEEDINGS OF SPIE, 2018, 卷号: 10799, 页码: UNSP 107990M 作者:  Wen, Shu-wen;  Gao, Yang;  Zhang DP(张大鹏);  Zhang, Da-peng;  Han, Chao   |  收藏  |  浏览/下载：36/0  |  提交时间：2019/10/10 MEMS (Micro-Electro-Mechanical System)  filter  interdigital  microstrip line  grounding via-holes  design   Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films (EI CONFERENCE) 会议论文  OAI收割 Shan C. X.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.; Choy K. L. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 Zinc oxide (ZnO) films have been prepared on glass substrate in layer-by-layer mode using an atomic-layer deposition (ALD) technique  and a metal-semiconductor-metal structured photodetector has been fabricated on the ZnO films employing interdigital Au as metal contacts. The photodetector shows a cutoff wavelength at around 390 nm and has an obvious responsivity in the whole UVA spectral range. Because the response of the ZnO photodetector covers the whole UV solar irradiation that can reach the earth  the photodetector promises to be useful in monitoring UV solar irradiation to protect people from harm caused by the solar irradiation. Furthermore  the capability of preparing large-area uniform ZnO films of ALD makes it favorable for possible mass production of this kind of photodetector. 2009 American Vacuum Society.   Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文  OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者:  Zhang J.;  Li B.;  Li B.;  Li B.;  Zhao Y. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..   The origin of the weak ferroelectric-like hysteresis effect in paraelectric Ba0.5Sr0.5TiO3 thin films grown epitaxially on LaAlO3 期刊论文  OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 卷号: 18, 期号: 19, 页码: 4709 Zhu, XH; Yong, LP; Tian, HF; Peng, W; Li, JQ; Zheng, DN 收藏  |  浏览/下载：34/0  |  提交时间：2013/09/23 MICROWAVE PHASE SHIFTERS  DIELECTRIC-PROPERTIES  INTERDIGITAL CAPACITORS  SINGLE-CRYSTAL  PERMITTIVITY  RELAXATION  DISPERSION  BEHAVIOR  LAYER   Influence of oxygen pressure on the structural and dielectric properties of laser-ablated Ba0.5Sr0.5TiO3 thin films epitaxially grown on (001) MgO for microwave phase shifters 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 卷号: 39, 期号: 10, 页码: 2282 Zhu, XH; Meng, QD; Yong, LP; He, YS; Cheng, BL; Zheng, DN 收藏  |  浏览/下载：36/0  |  提交时间：2013/09/17 INTERDIGITAL CAPACITORS  TUNABLE PROPERTIES  STRAIN  FERROELECTRICITY  SUBSTRATE  SRTIO3  LAYER  (BA  BST  PLD   Microwave characterization of (Pb,La)TiO3 thin films integrated on ZrO2/SiO2/Si wafers by sol-gel techniques 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 20, 页码: 4696-4698 Song, ZT; Wang, Y; Chan, HLW; Choy, CL; Feng, SL 收藏  |  浏览/下载：40/0  |  提交时间：2012/03/24 INTERDIGITAL CAPACITORS  TEMPERATURE  FATIGUE  DEVICES  SENSOR  (PB   Electro-mass olfactory multi-sensor (EMMS) 期刊论文  OAI收割 SENSORS AND ACTUATORS B-CHEMICAL, 2000, 卷号: 66, 期号: 1-3, 页码: #REF! 作者:  Sun, A;  Yang, YN;  Jiang YL(蒋延龄);  Jiang, YL;  Fan, ZJ 收藏  |  浏览/下载：16/0  |  提交时间：2016/04/12 electronic nose  olfactory sensor  quartz crystal microbalance  interdigital electrode  recognition method  phospholipids