机构

• 半导体研究所 [3]
• 长春光学精密机械与物... [1]
• 化学研究所 [1]
• 合肥物质科学研究院 [1]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [1]

内容类型

• 期刊论文 [6]
• 会议论文 [1]

发表日期

• 2022 [1]
• 2010 [1]
• 2008 [2]
• 2006 [1]
• 2003 [1]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Improving Luminous Efficacy of Ceramic Resonator Plasma Lamps by Using Microwave Pulse Modulation 期刊论文  OAI收割 IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022 作者:  Jia, Hua;  Xu, Mengyao;  Huan, Weiding;  Shan, Jiafang;  Liu, Fukun   |  收藏  |  浏览/下载：60/0  |  提交时间：2022/12/23 Plasmas  Radio frequency  Optical resonators  High intensity discharge lamps  Ceramics  Pulse modulation  Electrodes  High-intensity discharge (HID)  light-emitting plasma  luminous efficacy  microwave resonator  plasma lamp  pulse modulation   Photo/electroluminescence properties of an europium (III) complex doped in 4,4 '-N,N '-dicarbazole-biphenyl matrix 期刊论文  OAI收割 thin solid films, 2010, 卷号: 518, 期号: 15, 页码: 4403-4407 Zhou YH; Zhou L; Wu J; Li HY; Zheng YX; You XZ; Zhang HJ 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/06 LIGHT-EMITTING DEVICES  ELECTROLUMINESCENT DEVICES  PLASMA TREATMENT  ENERGY-TRANSFER  DIODES  DYE  EFFICIENCY  EMISSION  LAYER  QUINACRIDONE   Improvement of the performance of gan-based leds grown on sapphire substrates patterned by wet and icp etching 期刊论文  iSwitch采集 Solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967 作者:  Gao, Haiyong;  Yan, Fawang;  Zhang, Yang;  Li, Jinmin;  Zeng, Yiping 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Ingan/gan multiple quantum wells  Light-emitting diode  Wet etching  Inductively coupled plasma etching   Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文  OAI收割 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：65/4  |  提交时间：2010/03/08 InGaN/GaN multiple quantum wells  light-emitting diode  wet etching  inductively coupled plasma etching   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Effects of electrode modifications on the performance of polymer light-emitting electrochemical cells 期刊论文  OAI收割 SYNTHETIC METALS, 2003, 卷号: 138, 期号: 3, 页码: 561-565 作者:  Sun, QJ;  Yang, CH;  He, GF;  Li, YF;  Wang, HQ   |  收藏  |  浏览/下载：22/0  |  提交时间：2019/04/09 Electrode Modifications  Barium  Pedot-pss  Oxygen-plasma  Polymer Light-emitting Electrochemical Cells   ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文  OAI收割 plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174 Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG 收藏  |  浏览/下载：90/7  |  提交时间：2010/08/12 ECR plasma  cubic GaN  low pressure MOCVD  MOLECULAR-BEAM EPITAXY  CYCLOTRON-RESONANCE PLASMA  LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  GALLIUM NITRIDE  GAAS  DIMETHYLHYDRAZINE