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CAS IR Grid
机构
半导体研究所 [5]
长春光学精密机械与物... [1]
高能物理研究所 [1]
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OAI收割 [5]
iSwitch采集 [2]
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期刊论文 [6]
会议论文 [1]
发表日期
2007 [2]
2006 [2]
2005 [3]
学科主题
Physics [1]
光电子学 [1]
半导体材料 [1]
半导体物理 [1]
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Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd
期刊论文
iSwitch采集
Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
作者:
Zhao, Yongmei
;
Sun, Guosheng
;
Liu, Xingfang
;
Li, Jiaye
;
Zhao, Wanshun
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/05/12
Aluminum nitride
Low pressure metalorganic chemical vapor deposition (lp-mocvd)
V/iii ratio
Preferential orientation growth mechanism
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
期刊论文
OAI收割
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Luo, MC
;
Li, JM
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/03/08
aluminum nitride
low pressure metalorganic chemical vapor deposition (LP-MOCVD)
V/III ratio
preferential orientation growth mechanism
Characteristics of ingan multiple quantum well blue-violet laser diodes
期刊论文
iSwitch采集
Science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732
作者:
Li Deyao
;
Zhang Shuming
;
Wang Jianfeng
;
Chen Jun
;
Chen Lianghui
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/05/12
Metalorganic chemical vapor deposition (mocvd)
Gan-hased laser diodes
Multiple quantum well
Ridge waveguide
Threshold current
Characteristics of InGaN multiple quantum well blue-violet laser diodes
期刊论文
OAI收割
science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732
Li DY (Li Deyao)
;
Zhang SM (Zhang Shuming)
;
Wang JF (Wang Jianfeng)
;
Chen J (Chen Jun)
;
Chen LH (Chen Lianghui)
;
Chong M (Chong Ming)
;
Zhu JJ (Zhu Jianjun)
;
Zhao DG (Zhao Degang)
;
Liu ZS (Liu Zongshun)
;
Yang H (Yang Hui)
;
Liang JW (Liang Junwu)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/04/11
metalorganic chemical vapor deposition (MOCVD)
GaN-hased laser diodes
multiple quantum well
ridge waveguide
threshold current
ELECTRICAL-PROPERTIES
GAN SUBSTRATE
CONTACTS
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)
会议论文
OAI收割
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.
;
Shan C. X.
;
Yang Y.
;
Zhang J. Y.
;
Liu Y. C.
;
Lu Y. M.
;
Shen D. Z.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/03/25
CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time
the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration
the size of dots becomes larger and the density decreases
which is explained by virtue of the surface free energy.
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
期刊论文
OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF!
作者:
Chen, J
;
Wang, JF
;
Zhang, JC
;
Wang, H
;
Huang, Y
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2016/04/11
GaN
metalorganic chemical vapor deposition (MOCVD)
epitaxy lateral overgrowth
stacking faults
synchrotron radiation X-ray diffraction (XRD)
pole figure
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
期刊论文
OAI收割
high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39
Chen J
;
Wang JF
;
Zhang JC
;
Wang H
;
Huang Y
;
Wang YT
;
Yang H
;
Jia QJ
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
GaN
metalorganic chemical vapor deposition (MOCVD)
epitaxy lateral overgrowth
stacking faults
synchrotron radiation X-ray diffraction (XRD)
pole figure
WURTZITE GAN
LUMINESCENCE