中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共7条,第1-7条 帮助

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Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd 期刊论文  iSwitch采集
Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
作者:  
Zhao, Yongmei;  Sun, Guosheng;  Liu, Xingfang;  Li, Jiaye;  Zhao, Wanshun
收藏  |  浏览/下载:35/0  |  提交时间:2019/05/12
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文  OAI收割
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM
收藏  |  浏览/下载:53/0  |  提交时间:2010/03/08
Characteristics of ingan multiple quantum well blue-violet laser diodes 期刊论文  iSwitch采集
Science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732
作者:  
Li Deyao;  Zhang Shuming;  Wang Jianfeng;  Chen Jun;  Chen Lianghui
收藏  |  浏览/下载:28/0  |  提交时间:2019/05/12
Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文  OAI收割
science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732
Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu)
收藏  |  浏览/下载:41/0  |  提交时间:2010/04/11
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/25
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文  OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF!
作者:  
Chen, J;  Wang, JF;  Zhang, JC;  Wang, H;  Huang, Y
收藏  |  浏览/下载:20/0  |  提交时间:2016/04/11
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文  OAI收割
high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39
Chen J; Wang JF; Zhang JC; Wang H; Huang Y; Wang YT; Yang H; Jia QJ
收藏  |  浏览/下载:58/0  |  提交时间:2010/04/11