中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共7条，第1-7条

帮助

条数/页：排序方式：
	Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd 期刊论文 iSwitch采集 Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 作者: Zhao, Yongmei; Sun, Guosheng; Liu, Xingfang; Li, Jiaye; Zhao, Wanshun 收藏 \| 浏览/下载：35/0 \| 提交时间：2019/05/12 Aluminum nitride Low pressure metalorganic chemical vapor deposition (lp-mocvd) V/iii ratio Preferential orientation growth mechanism
	Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文 OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM 收藏 \| 浏览/下载：53/0 \| 提交时间：2010/03/08 aluminum nitride low pressure metalorganic chemical vapor deposition (LP-MOCVD) V/III ratio preferential orientation growth mechanism
	Characteristics of ingan multiple quantum well blue-violet laser diodes 期刊论文 iSwitch采集 Science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732 作者: Li Deyao; Zhang Shuming; Wang Jianfeng; Chen Jun; Chen Lianghui 收藏 \| 浏览/下载：28/0 \| 提交时间：2019/05/12 Metalorganic chemical vapor deposition (mocvd) Gan-hased laser diodes Multiple quantum well Ridge waveguide Threshold current
	Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文 OAI收割 science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732 Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu) 收藏 \| 浏览/下载：41/0 \| 提交时间：2010/04/11 metalorganic chemical vapor deposition (MOCVD) GaN-hased laser diodes multiple quantum well ridge waveguide threshold current ELECTRICAL-PROPERTIES GAN SUBSTRATE CONTACTS
	Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文 OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration the size of dots becomes larger and the density decreases which is explained by virtue of the surface free energy.
	Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文 OAI收割 HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF! 作者: Chen, J; Wang, JF; Zhang, JC; Wang, H; Huang, Y 收藏 \| 浏览/下载：20/0 \| 提交时间：2016/04/11 GaN metalorganic chemical vapor deposition (MOCVD) epitaxy lateral overgrowth stacking faults synchrotron radiation X-ray diffraction (XRD) pole figure
	Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation 期刊论文 OAI收割 high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39 Chen J; Wang JF; Zhang JC; Wang H; Huang Y; Wang YT; Yang H; Jia QJ 收藏 \| 浏览/下载：58/0 \| 提交时间：2010/04/11 GaN metalorganic chemical vapor deposition (MOCVD) epitaxy lateral overgrowth stacking faults synchrotron radiation X-ray diffraction (XRD) pole figure WURTZITE GAN LUMINESCENCE