机构

• 化学研究所 [3]
• 半导体研究所 [3]
• 金属研究所 [2]
• 海洋研究所 [2]
• 高能物理研究所 [1]

采集方式

• OAI收割 [9]
• iSwitch采集 [2]

内容类型

• 期刊论文 [11]

发表日期

• 2021 [1]
• 2019 [1]
• 2018 [1]
• 2017 [1]
• 2016 [1]
• 2009 [1]
• 更多

学科主题

• Materials ... [1]
• 半导体材料 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of pin type on photoelectrochemical cathodic protection 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 851, 页码: 9 作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang;  Sun, Mengmeng;  Hou, Jian   |  收藏  |  浏览/下载：30/0  |  提交时间：2021/04/12 Graphitic carbon nitride  Photoelectrochemical cathodic protection  p/n type  Doping  Photocurrent direction   Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping 期刊论文  OAI收割 ELECTROCHIMICA ACTA, 2019, 卷号: 297, 页码: 488-496 作者:  Jing, Jiangping;  Chen, Zhuoyuan;  Feng, Chang   |  收藏  |  浏览/下载：40/0  |  提交时间：2019/08/27 Graphitic carbon nitride p/n type  Fermi level  K&I co-doping  Photoelectrochemical performance   Cu-Thienoquinone Charge-Transfer Complex: Synthesis, Characterization, and Application in Organic Transistors 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 31, 页码: 26451-26455 作者:  Wang, Deliang;  Qiao, Xiaolan;  Tao, Jingwei;  Zou, Ye;  Wu, Hongzhuo   |  收藏  |  浏览/下载：167/0  |  提交时间：2019/04/09 Charge-transfer Complex  Organic Transistor  Copper Electrode  Doping Layer  N-type Organic Transistor  Organic Electronics   Efficient Solution-Processed n-Type Small-Molecule Thermoelectric Materials Achieved by Precisely Regulating Energy Level of Organic Dopants 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 期号: 34, 页码: 28795-28801 作者:  Yuan, Dafei;  Huang, Dazhen;  Zhang, Cheng;  Zou, Ye;  Di, Chong-an   |  收藏  |  浏览/下载：37/0  |  提交时间：2018/06/15 Organic Thermoelecttics  N-type Doping Small Molecule  Solution-processed  Energy Level   Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials 期刊论文  OAI收割 ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2016, 卷号: 55, 期号: 36, 页码: 10672-10675 作者:  Huang, Dazhen;  Wang, Chao;  Zou, Ye;  Shen, Xingxing;  Zang, Yaping 收藏  |  浏览/下载：43/0  |  提交时间：2016/12/29 chemical doping  interfacial doping  n-type materials  organic semiconductors  thermoelectrics   The structural properties of B-O codoped diamond films 期刊论文  OAI收割 DIAMOND AND RELATED MATERIALS, 2009, 卷号: 18, 期号: 2-3, 页码: #REF! 作者:  Hu, XJ;  Shen, YG;  Hao XP(郝小鹏);  Wang BY(王宝义);  Hao, XP 收藏  |  浏览/下载：33/0  |  提交时间：2016/04/12 Diamond film  n-type doping  Ion implantation  Structural properties   Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux 期刊论文  OAI收割 Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2007, 卷号: 264, 期号: 2, 页码: 272-276 S. B. Dun; T. C. Lu; Q. Hu; Y. W. Hu; C. F. You; S. B. Zhang; B. Tang; J. L. Dai; N. K. Huang 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/13 Ge nanocrystals  neutron transmutation doping  photoluminescence  Raman  scattering  doped si nanocrystals  electron-spin-resonance  semiconductor  nanocrystals  n-type  implanted sio2-films  silicon nanocrystals  porous  silicon  raman  luminescence  temperature   Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping 期刊论文  iSwitch采集 Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5, 2005, 卷号: 475-479, 页码: 1663-1667 作者:  Zhang, RY;  Wang, W;  Zhou, F;  Bian, J;  Zhao, LJ 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 1.5 mu m ingaasp/ingaasp  N-type modulation-doping mqw  Low threshold current density   Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326 Liu JP; Huang DD; Li JP; Lin YX; Sun DZ; Kong MY 收藏  |  浏览/下载：83/14  |  提交时间：2010/08/12 n-type doping  p-type doping  Si/SiGe  HBT  GSMBE  SI   Doping during low-temperature growth of materials for n-p-n si/sige/si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326 作者:  Liu, JP;  Huang, DD;  Li, JP;  Lin, YX;  Sun, DZ 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 N-type doping  P-type doping  Si/sige  Hbt  Gsmbe