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	Fabrication and characterization of metal-semiconductor-metal (msm) ultraviolet photodetectors on undoped gan/sapphire grown by mbe 期刊论文 iSwitch采集 Journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 作者: Xu, HZ; Wang, ZG; Kawabe, M; Harrison, I; Ansell, BJ 收藏 \| 浏览/下载：45/0 \| 提交时间：2019/05/12 Gan Photoluminescence Optical quenching of photoconductivity Native defect level Molecular beam epitaxy
	Photoluminescence and optical quenching of photoconductivity studies on undoped gan grown by molecular beam epitaxy 期刊论文 iSwitch采集 Journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 作者: Xu, HZ; Wang, ZG; Harrison, I; Bell, A; Ansell, BJ 收藏 \| 浏览/下载：36/0 \| 提交时间：2019/05/12 Gan Photoluminescence Optical quenching of photoconductivity Native defect level Molecular beam epitaxy
	Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 Xu HZ; Wang ZG; Kawabe M; Harrison I; Ansell BJ; Foxon CT 收藏 \| 浏览/下载：74/0 \| 提交时间：2010/08/12 GaN photoluminescence optical quenching of photoconductivity native defect level molecular beam epitaxy SINGLE-CRYSTAL GAN I-N PHOTODIODES HIGH-SPEED PHOTOCONDUCTORS ALXGA1-XN SIMULATIONS DETECTORS SAPPHIRE LAYERS
	Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏 \| 浏览/下载：58/0 \| 提交时间：2010/08/12 GaN photoluminescence optical quenching of photoconductivity native defect level molecular beam epitaxy N-TYPE GAN DEEP-LEVEL DEFECTS YELLOW LUMINESCENCE MAGNETIC-RESONANCE THIN-FILMS