中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment 期刊论文  OAI收割
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 卷号: 211, 期号: 5, 页码: 1175
Deng, Z; Jiang, Y; Zuo, P; Fang, YT; Ma, ZG; Jia, HQ; Zhou, JM; Chen, H
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Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
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Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation 期刊论文  OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492
Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD
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