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	Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment 期刊论文 OAI收割 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 卷号: 211, 期号: 5, 页码: 1175 Deng, Z; Jiang, Y; Zuo, P; Fang, YT; Ma, ZG; Jia, HQ; Zhou, JM; Chen, H 收藏 \| 浏览/下载：35/0 \| 提交时间：2015/04/14 efficiency droop GaN light emitting diodes low temperature p-GaN layer
	Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.
	Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation 期刊论文 OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492 Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD 收藏 \| 浏览/下载：247/9 \| 提交时间：2010/04/11 P-TYPE ZNO THIN-FILMS ROOM-TEMPERATURE PHOTOLUMINESCENCE DEPOSITION SUBSTRATE VACANCIES LAYER BEAM GAN