中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共459条,第1-10条 帮助

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Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects 期刊论文  OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 9, 页码: 7
作者:  
Wang, Ying-Zhe;  Zheng, Xue-Feng;  Lv, Ling;  Cao, Yan-Rong;  Wang, Xiao-Hu
  |  收藏  |  浏览/下载:24/0  |  提交时间:2021/12/08
CsPb(Br/I)(3) Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes 期刊论文  OAI收割
ACS APPLIED NANO MATERIALS, 2021, 卷号: 4, 期号: 8, 页码: 8383-8389
作者:  
Ma, Zhanhong;   Li, Xiaodong;   Zhang, Chengxi;   Turyanska, Lyudmila;   Lin, Shan;   Xi, Xin;   Li, Jing;   Hu, Tiangui;   Wang, Junfei;   Patane, Amalia;   Zhao, Lixia
  |  收藏  |  浏览/下载:31/0  |  提交时间:2022/05/09
Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices 期刊论文  OAI收割
ACS Applied Nano Materials, 2021, 卷号: 4, 期号: 11, 页码: 12127-12136
作者:  
P. Yang;  H. Yang;  Z. Wu;  F. Liao;  X. Guo
  |  收藏  |  浏览/下载:16/0  |  提交时间:2022/06/13
Plasmon-enabled spectrally narrow ultraviolet luminescence device using Pt nanoparticles covered one microwire-based heterojunction 期刊论文  OAI收割
Optics Express, 2021, 卷号: 29, 期号: 14, 页码: 21783-21794
作者:  
K. Ma;  B. Li;  X. Zhou;  M. Jiang;  Y. Liu and C. Kan
  |  收藏  |  浏览/下载:23/0  |  提交时间:2022/06/13
Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices 期刊论文  OAI收割
Acs Applied Nano Materials, 2021, 卷号: 4, 期号: 11, 页码: 12127-12136
作者:  
P. Yang;  H. F. Yang;  Z. Y. Wu;  F. Y. Liao;  X. J. Guo
  |  收藏  |  浏览/下载:6/0  |  提交时间:2023/06/14
Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes 期刊论文  OAI收割
CRYSTENGCOMM, 2021, 卷号: 23, 期号: 12, 页码: 2360--2366
作者:  
BSRF用户
  |  收藏  |  浏览/下载:4/0  |  提交时间:2022/09/15
Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth 期刊论文  OAI收割
PHOTONICS, 2021, 卷号: 8, 期号: 5
作者:  
Jiang, Jie'an;  Xu, Houqiang;  Chen, Li;  Yan, Long;  Hoo, Jason
  |  收藏  |  浏览/下载:14/0  |  提交时间:2021/12/01
The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) beta-Ga2O3 Substrate for Vertical Light Emitting Diodes 期刊论文  OAI收割
PHOTONICS, 2021, 卷号: 8, 期号: 2, 页码: 42
作者:  
Zhao, Jie;   Li, Weijiang;   Wang, Lulu;   Wei, Xuecheng;   Wang, Junxi;   Wei, Tongbo
  |  收藏  |  浏览/下载:10/0  |  提交时间:2022/11/03
Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer 期刊论文  OAI收割
Journal of Crystal Growth, 2020, 卷号: 536
作者:  
Song, Jie;  Choi, Joowon;  Han, Jung
  |  收藏  |  浏览/下载:38/0  |  提交时间:2020/03/12
Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth 期刊论文  OAI收割
PHOTONICS RESEARCH, 2020, 卷号: 8, 期号: 7, 页码: 1110-1117
作者:  
Rongqiao Wan;   Xiang Gao;   Liancheng Wang;   Shuo Zhang;   Xiongbin Chen;   Zhiqiang Liu;   Xiaoyan Yi;   Junxi Wang;   Junhui Li;   Wenhui Zhu;   Jinmin Li
  |  收藏  |  浏览/下载:9/0  |  提交时间:2021/05/25