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	Enhanced Degradability of the Apatite-Based Calcium Phosphate Cement Incorporated with Amorphous MgZnCa Alloy 期刊论文 OAI收割 ACS BIOMATERIALS SCIENCE & ENGINEERING, 2023, 卷号: 9, 期号: 11, 页码: 6084-6093 作者: Wan, Ye; Ma, Haoxiang; Ma, Zheng; Tan, Lili; Miao, Lei \| 收藏 \| 浏览/下载：13/0 \| 提交时间：2024/01/07 Fourier transform infrared spectrometer(FTIR) calciumphosphate cement incorporation peak shift degradability
	Research on Wavelength Shift Correction Algorithm for Tunable Laser Absorption Spectrum 期刊论文 OAI收割 SPECTROSCOPY AND SPECTRAL ANALYSIS, 2018, 期号: 11, 页码: 3328-3333 作者: Tang Qi-xing; Zhang Yu-jun; Chen Dong; Zhang Kai; He Ying \| 收藏 \| 浏览/下载：63/0 \| 提交时间：2019/12/25 Laser absorption spectroscopy Laser wavelength shift Time domain correlation Spectrum peak-finding
	In Vivo Quantitative Reconstruction Studies of Bioluminescence Tomography: Effects of Peak-Wavelength Shift and Model Deviation 期刊论文 OAI收割 IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 2010, 卷号: 57, 期号: 10, 页码: 2579-2582 作者: Liu, Junting; Chen, Duofang; Li, Xiangsi; Ma, Xiaopeng; Chen, Haichao 收藏 \| 浏览/下载：29/0 \| 提交时间：2015/08/12 Bioluminescence tomography (BLT) model deviations peak-wavelength shift quantitative reconstruction
	Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths Lw varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
	Displacement estimation by the phase-shiftings of fourier transform in present white noise (EI CONFERENCE) 会议论文 OAI收割 ICO20: Optical Information Processing, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wu Y.-H. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 Displacement estimation is a fundamental problem in Real-time video image processing. It can be typically approached by theories based on features in spatial domain. This paper presents an algorithm which improves the theory for estimating the moving object's displacement in spatial domain by its Fourier transform frequency spectrum. Because of the characters of Fourier transform the result is based on all the features in the image. Utilizing shift theorem of Fourier transform and auto-registration the algorithm employs the phase spectrum difference in polar coordinate of two frame images sequence with the moving target1 2. The method needn't transform frequency spectrum to spatial domain after calculation comparing with the traditional algorithm which has to search Direc peak and it reduces processing time. Since the technique proposed uses all the image information including all the white noise in the image especially and it's hard to overcome the aliasing from noises but the technique can be an effective way to analyze the result in little white noise by the different characters between high and low frequency bands. It can give the displacement of moving target within 1 pixel of accuracy. Experimental evidence of this performance is presented and the mathematical reasons behind these characteristics are explained in depth. It is proved that the algorithm is fast and simple and can be used in image tracking and video image processing.
	A study of interaction between FITC- labeled antibody and optical fiber surface (EI CONFERENCE) 会议论文 OAI收割 ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang X.; Wang X.; Wang X. 收藏 \| 浏览/下载：43/0 \| 提交时间：2013/03/25 The immobilization of antibodies on solid surface has been widely studied in elucidating immunoassay and in developing immunosensor. In this paper FITC-labeled goat anti-human IgG were covalently immobilized on 3-aminopropyltriethoxysilane (APTES) and glutaraldehyde (Glu) to modify the distal end of a fiber-optic probe. The higher density and stability of FITC-labeled goat anti-human IgG could be obtained on the fiber surface modified with APTES-Glu than that on the non-modified fiber surface by evanescent excited fluorescence spectroscopy. Furthermore red shift of the FITC fluorescence dye emission peak was observed on different fiber surface exhibiting different interaction between FITC- labeled antibody and surface. Finally under these conditions antigen-antibody reaction was investigated as an immunosensor. Detection limit of the evanescent wave optic-fiber biosensor is 10ng/ml.
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：39/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者: Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.