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	Synthesis, morphology and optical properties of SrTiO3:Pr 3+ phosphors (EI CONFERENCE) 会议论文 OAI收割 3rd International Symposium on Functional Materials 2009, ISFM 2009, June 15, 2009 - June 18, 2009, Jinju, Korea, Republic of 作者: Li W.; Li W. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 SrTiO3:Pr3+ phosphors with different morphologies were prepared by using high-temperature solid-state reaction the solvothermal method and sol-gel synthesis. All the products were systematically characterized by powder x-ray diffraction (XRD) infrared spectroscopy (IR) scanning electron microscopy (SEM) photoluminescence (PL) and photoluminescent excitation spectra (PLE). The influence of different synthesis methods on the morphology and optical properties of SrTiO3:Pr3+ was discussed. 2010 The Royal Swedish Academy of Sciences.
	Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation 期刊论文 OAI收割 CHINESE PHYSICS C, 2008, 卷号: 32, 期号: Suppl. 2, 页码: 251-254 作者: Liu Chun-Bao; Wang Zhi-Guang; Zang Hang; Wei Kong-Fang; Yao Cun-Feng \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2010/10/29 heavy ion irradiation carbon ion implantation photoluminescence (PL) spectra
	Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths Lw varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
	Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文 OAI收割 Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2013/03/25 In this paper highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2) PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2 a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2 3 4.... Under excitation density of 300 kW/cm 2 the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2 the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.
	Effects of annealing and dopant concentration on the optical characteristics of ZnO : Al thin films by sol-gel technique 期刊论文 OAI收割 Physica B-Condensed Matter, 2006, 卷号: 382, 期号: 1-2, 页码: 201-204 S. W. Xue; X. T. Zu; W. G. Zheng; M. Y. Chen; X. Xiang 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/04/14 ZnO thin films PL sol-gel annealing absorption spectra transmittance oxide-films photoluminescence green enhancement ultraviolet substrate emissions oxidation si
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.