中国科学院机构知识库网格系统: 检索

Sub-nanosecond periodically poled lithium niobate optical parametric generator and amplifier pumped by an actively Q-switched diode-pumped Nd:YAG microlaser 期刊论文 OAI收割
Laser Physics, 2017, 卷号: 27, 期号: 5, 页码: 055403
作者: Liu, L.

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Conversion efficiency - Diodes - Energy conversion - Energy efficiency - Harmonic generation - Light amplifiers - Lithium - Neodymium lasers - Niobium compounds - Optical pumping - Phase matching - Pumping (laser) - Q switching - Tuning - Ultrashort pulses

Two side liquid-cooled and passively Q-switched disk oscillator with nanosheets in flowing CCl4 期刊论文 OAI收割
applied physics b-lasers and optics, 2016, 卷号: 122, 期号: 9
作者:

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Absorption refrigeration Coolants Energy efficiency Graphene Laser beams Laser mirrors Mirrors Molybdenum compounds Nanosheets Optical pumping Pulse repetition rate Q switched lasers Saturable absorbers

High repetition rate and short pulse width electro-optic Q-switched Nd:YVO4laser 期刊论文 OAI收割
zhongguo jiguang/chinese journal of lasers, 2016, 卷号: 43, 期号: 6
作者: Wang, Xu; Sun, Zhe; Cheng, Guanghua

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Efficiency Frequency doublers Lasers Pumping (laser) Q switched lasers Q switching Titanium Titanium oxides

Three-dimensional numerical study of a kitchen extractor adopting nearby pumping method 会议论文 OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, Dalian, China, OCT 05-06, 2012
作者: Deng J(邓晶)

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Computational fluid dynamics Computer simulation Efficiency Kitchens Manufacture Materials science Pumps Collection efficiency Computational Fluid Dynamics software Energy cost Gas films Negative pressures Numerical results Optimum designs Particular distribution Positive pressure Pumping effect Pumping mechanism Pumping methods Third generation

High power885 nm laser diodes with graded optical expand structures for small divergence angle 期刊论文 OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 12, 页码: 2382-2387
Wang, Jun; Bai, Yiming; Liu, Yuanyuan; He, Weili; Xiong, Cong; Wang, Cuiluan; Feng, Xiaoming; Zhong, Li; Liu, Suping; Ma, Xiaoyu

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Energy efficiency Epitaxial growth High power lasers Optimization Pumping(laser) Quantum well lasers Semiconductor quantum wells

Passively mode-locked Nd:YVO4 laser using a single-walled carbon nanotube saturable absorber pumped by880nm laser diode 期刊论文 OAI收割
japanese journal of applied physics, Japanese Journal of Applied Physics, 2011, 2011, 卷号: 50, 50, 期号: 12, 页码: 122703, 122703
作者: Zhang, Ling; Wang, Yong Gang; Yu, Hai Juan; Zhang, Shu Bao; Sun, Wei

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Conversion efficiency Neodymium Pulse repetition rate Pumping(laser) Single-walled carbon nanotubes(SWCN) Conversion Efficiency Neodymium Pulse Repetition Rate Pumping(Laser) Single-walled Carbon Nanotubes(Swcn)

Experiments of second harmonic generation output in pulsed TEA CO 2 laser (EI CONFERENCE) 会议论文 OAI收割
High-Power Lasers and Applications V, October 18, 2010 - October 19, 2010, Beijing, China
作者: Li D.

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It is always the hot subject to realize the output of high-power laser in the range of 3-5m wavelength. This rang of wave band has greatly important applications in military because it located in the atmosphere window. Generally there are two ways to obtain this range of laser wavelength. One way is through optical parameter oscillation (OPO) from shorter laser wavelength and the other is through second harmonic generation (SHG) from longer laser wavelength. Firstly the comparison between tow nonlinear crystals ZnGeP2 and AgGaSe2 is conducted for their nonlinear coefficient and damaging threshold in theory. The theoretical results show that the crystal AgGaSe 2 is more suitable for the SHG of pulsed TEA CO2 laser. When using pulsed TEA CO2 laser with wavelength of 9.3m to pumping AgGaSe2 SHG crystal the wavelength of 4.65m is obtained. In the condition of repetition rate 100Hz the upmost output power of single pulse is up to level of 1W which corresponding efficiency of SHG is about 6%. The experimental results show that the polarization of laser beam has greatly influence on the SHG output of the crystal. Under the radiation of 3MW/cm 2 from fundamental wave and the right position for maximal SHG output in the crystal when polarization of laser beam rotates 4.5 the SHG output of energy decrease about 30%. The research of this paper will make a foundation for further development of mid-infrared laser. 2010 Copyright SPIE - The International Society for Optical Engineering.

808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y.

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808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.

The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J.

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The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.

Geological analysis and physical modeling of structural pumping in high effective formation of Kela 2 gas field 期刊论文 OAI收割
SCIENCE IN CHINA SERIES D-EARTH SCIENCES, 2006, 卷号: 49, 期号: 10, 页码: 1070-1078
作者: Zhao Wenzhi; Wang Hongjun; Shan Jiazeng; Wang Zecheng; Xu Dafeng

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Kela 2 Gas Field Structural Pumping Gas-reservoir Formation Mechanism High Efficiency Physical Modeling