中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共7条,第1-7条 帮助

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Jackiw-Rebbi-type bound state carrying fractional fermion parity 期刊论文  OAI收割
JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT, 2015, 期号: 0, 页码: P02013
作者:  
Xiong, Y;  Tong, PQ
收藏  |  浏览/下载:27/0  |  提交时间:2016/11/21
Spin-orbit interaction induced anisotropic property in interacting quantum wires 期刊论文  OAI收割
nanoscale research letters, Nanoscale Research Letters, 2011, 2011, 卷号: 6, 6, 页码: 1-7, 1-7
作者:  
Cheng, Fang;  Zhou, Guanghui;  Chang, Kai;  Chang, K.(kchang@semi.ac.cn)
  |  收藏  |  浏览/下载:35/0  |  提交时间:2012/06/14
Half-metallic silicon nanowires: multiple surface dangling bonds and nonmagnetic doping 期刊论文  iSwitch采集
Physical review b, 2009, 卷号: 80, 期号: 8, 页码: 4
作者:  
Xu, Zhuo
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/10
Band gap engineering of gan nanowires by surface functionalization 期刊论文  iSwitch采集
Applied physics letters, 2009, 卷号: 94, 期号: 7, 页码: 3
作者:  
Fang, D. Q.;  Rosa, A. L.;  Frauenheim, Th.;  Zhang, R. Q.
收藏  |  浏览/下载:33/0  |  提交时间:2019/05/10
Strain relaxation and band-gap tunability in ternary inxga1-xn nanowires 期刊论文  iSwitch采集
Physical review b, 2008, 卷号: 78, 期号: 19, 页码: 4
作者:  
Xiang, H. J.;  Wei, Su-Huai;  Da Silva, Juarez L. F.;  Li, Jingbo
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires 期刊论文  OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 193301
作者:  
Li JB
收藏  |  浏览/下载:213/43  |  提交时间:2010/03/08
Electronic structures of GaAs/AlAs lateral superlattices 期刊论文  OAI收割
journal of physics-condensed matter, 1998, 卷号: 10, 期号: 28, 页码: 6311-6319
Li SS; Zhu BF
收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12