中国科学院机构知识库网格系统: 检索

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	Saving Energy of RRAM-Based Neural Accelerator Through State-Aware Computing 期刊论文 OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 7, 页码: 2115-2127 作者: He, Yintao; Wang, Ying; Li, Huawei; Li, Xiaowei \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2022/12/07 Computer architecture Microprocessors Resistance Power demand Training Biological neural networks Optimization Low power (LP) neural networks processing-in-memory resistive random-access memory (RRAM)
	A review of nanographene: growth and applications 期刊论文 OAI收割 MODERN PHYSICS LETTERS B, 2014, 卷号: 28, 期号: 20 Meng, JL; Shi, DX; Zhang, GY 收藏 \| 浏览/下载：38/0 \| 提交时间：2015/04/14 Nanographene direct growth strain sensor resistance random access memory charge trapping memory
	The microstructure investigation of GeTi thin film used for non-volatile memory 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2008, 卷号: 254, 期号: 15, 页码: 4638-4643 Shen, J; Liu, B; Song, ZT; Xu, C; Liang, S; Feng, SL; Chen, BM 收藏 \| 浏览/下载：19/0 \| 提交时间：2012/03/24 RANDOM-ACCESS MEMORY PHASE-CHANGE NEGATIVE RESISTANCE SWITCHING PHENOMENA GE2SB2TE5 FILM OXIDE-FILMS GLASSES TRANSITION
	Remarkable resistance change in plasma oxidized TiOx/TiNx film for memory application 期刊论文 OAI收割 CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 4, 页码: 1103-1105 Wu, LC; Song, ZT; Liu, B; Rao, F; Xu, C; Zhang, T; Yin, WJ; Feng, SL 收藏 \| 浏览/下载：10/0 \| 提交时间：2012/03/24 RANDOM-ACCESS MEMORY THIN OXIDE-FILMS GE2SB2TE5 FILMS ELECTRICAL-PROPERTIES NEGATIVE RESISTANCE NIO FILMS
	Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory 期刊论文 OAI收割 CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 11, 页码: 2929-2932 Xu, C; Liu, B; Song, ZT; Feng, SL; Chen, B 收藏 \| 浏览/下载：21/0 \| 提交时间：2012/03/24 RANDOM-ACCESS MEMORY ION-BEAM METHOD ELECTRICAL-PROPERTIES OPTICAL-PROPERTIES CELL-ELEMENT RESISTANCE IMPLANTATION TRANSITION ALLOYS MEDIA