中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
长春光学精密机械与物... [3]
沈阳自动化研究所 [3]
采集方式
OAI收割 [6]
内容类型
会议论文 [4]
期刊论文 [2]
发表日期
2019 [2]
2013 [1]
2012 [2]
2007 [1]
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Grouping Method of Semiconductor Bonding Equipment Based on Clustering by Fast Search and Find of Density Peaks for Dynamic Matching According to Processing Tasks
期刊论文
OAI收割
PROCESSES, 2019, 卷号: 7, 期号: 9, 页码: 1-24
作者:
Qiao, Feng
;
Gao ZJ(高治军)
;
Si W(司雯)
;
Han ZH(韩忠华)
;
Peng, Jiayu
  |  
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2019/11/13
semiconductor bonding equipment-grouping method
graph theory
association matrix
CFSFDP algorithm
High Power (27 W) Semiconductor Disk Laser Based on Pre-Metalized Diamond Heat-Spreader
期刊论文
OAI收割
IEEE Photonics Journal, 2019, 卷号: 11, 期号: 2
作者:
G.-Y.Hou
;
S.-L.Shu
;
J.Feng
;
A.Popp
;
B.Schmidt
  |  
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2020/08/24
Semiconductor lasers,Binary alloys,Copper alloys,Diamonds,Heat resistance,Heating equipment,Mergers and acquisitions,Metallizing
Research of Material Transfer Software Platform in IC Equipment Controlling System
会议论文
OAI收割
2013 4th IEEE International Conference on Software Engineering and Service Science (ICSESS), Beijing, China, May 23-25, 2013
作者:
Wang YN(王亚楠)
;
Liu MZ(刘明哲)
;
Liu YF(刘元峰)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/12/26
semiconductor equipment control system
material transfer
versatility
rapid development
Design of the real-time autofocusing system for collimator with long focus length and large aperture (EI CONFERENCE)
会议论文
OAI收割
2011 International Academic Conference on Numbers, Intelligence, Manufacturing Technology and Machinery Automation, MAMT 2011, December 24, 2011 - December 25, 2011, Wuhan, China
作者:
Zhang X.
;
Zhang X.
;
Zhang X.
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2013/03/25
Large aperture collimator which has been widely used for calibrating and testing various optical devices plays an essential role in correlative laboratories. As being the basic testing and calibration equipment
the large aperture collimator's accuracy should be much higher than the device under testing in order to ensure the accuracy of the measurement. However
the process of adjusting the collimator is extremely complicated due to the collimator's large aperture and long focal length. So it is difficult to ensure the measurement's quality and easy to cause the system being vulnerable to the surrounding environment. One of the most common problems is defocus. In order to solve the problem above
this issue presents a new type of autocollimator autofocusing system which uses pentaprism instead of using large-aperture plane mirror
semiconductor lasers as light source and CCD sensor as receiver. The system is smaller
lighter
and more convenient when using. The computer simulation shows that the autofocusing system's resolution could reach the accuracy of 40m. If we use the relevant algorithms to execute the sub-pixel scanning
the resolution could reach the accuracy of 10m. It shows that the system could satisfy the required testing precision of testing large aperture optical device.
Research and implementation of the interface a data collection management
会议论文
OAI收割
2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012, Yichang, China, April 21-23, 2012
作者:
Ye JF(叶家发)
;
Liu MZ(刘明哲)
;
Wang YN(王亚楠)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2012/12/28
semiconductor equipment
factory automation
Interface A
data collection
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Li J.
;
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Li J.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.