机构

• 长春光学精密机械与物... [2]
• 半导体研究所 [2]
• 金属研究所 [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2011 [3]
• 2008 [1]

学科主题

• 半导体器件 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3 期刊论文  OAI收割 Rsc Advances, 2018, 卷号: 8, 期号: 12, 页码: 6341-6345 作者:  Yang, C.;  Liang, H. W.;  Zhang, Z. Z.;  Xia, X. C.;  Tao, P. C.   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/09/17 semiconductor ultraviolet photodetectors  heterojunction  film  wavelength  detectors  nanowires  Chemistry   High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films 期刊论文  iSwitch采集 Ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 作者:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Metal-insulator-semiconductor (mis) devices  Photodetectors  Ultraviolet (uv) detectors   High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722 Feng Zhang; Guosheng Sun; Huolin Huang; Zhengyun Wu; Lei Wang; Wanshun Zhao; Xingfang Liu; Guoguo Yan; Liu Zheng; Lin Dong; Yiping Zeng 收藏  |  浏览/下载：29/0  |  提交时间：2012/09/04 Metal–insulator–semiconductor (MIS) devices  photodetectors  ultraviolet (UV) detectors   High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 作者:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei   |  收藏  |  浏览/下载：26/0  |  提交时间：2021/02/02 Metal-insulator-semiconductor (MIS) devices  photodetectors  ultraviolet (UV) detectors   Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文  OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者:  Zhang J.;  Li B.;  Li B.;  Li B.;  Zhao Y. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..