机构

• 新疆理化技术研究所 [8]
• 近代物理研究所 [8]
• 自动化研究所 [1]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [12]
• 会议论文 [4]
• 学位论文 [1]

发表日期

• 2021 [1]
• 2019 [1]
• 2018 [3]
• 2017 [1]
• 2016 [2]
• 2015 [2]
• 更多

学科主题

• Physics [1]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13 作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu   |  收藏  |   Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文  OAI收割 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)   |  收藏  |   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]   |  收藏  |   Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文  OAI收割 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang)   |  收藏  |   Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7 作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao) 收藏  |   Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space 会议论文  OAI收割 作者:  Zhang, Zhangang;  Lei, Zhifeng;  En, Yunfei;  Liu, Jie;  IEEE   |  收藏  |   基于SOI工艺抗辐照嵌入式SRAM关键技术研究 学位论文  OAI收割 工学博士, 中国科学院自动化研究所: 中国科学院大学, 2015 作者:  刘丽 收藏  |   Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10 作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng)   |  收藏  |