中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共17条,第1-10条 帮助

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Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文  OAI收割
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:  
He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu
  |  收藏  |  浏览/下载:76/0  |  提交时间:2022/01/12
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  
Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
  |  收藏  |  浏览/下载:88/0  |  提交时间:2019/11/10
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文  OAI收割
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  
Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
  |  收藏  |  浏览/下载:50/0  |  提交时间:2018/10/08
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:  
Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)
  |  收藏  |  浏览/下载:54/0  |  提交时间:2018/05/15
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  
Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
  |  收藏  |  浏览/下载:61/0  |  提交时间:2018/09/27
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文  OAI收割
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
作者:  
Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang)
  |  收藏  |  浏览/下载:47/0  |  提交时间:2017/12/05
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
作者:  
Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao)
收藏  |  浏览/下载:27/0  |  提交时间:2016/12/12
Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space 会议论文  OAI收割
作者:  
Zhang, Zhangang;  Lei, Zhifeng;  En, Yunfei;  Liu, Jie;  IEEE
  |  收藏  |  浏览/下载:28/0  |  提交时间:2019/03/27
基于SOI工艺抗辐照嵌入式SRAM关键技术研究 学位论文  OAI收割
工学博士, 中国科学院自动化研究所: 中国科学院大学, 2015
作者:  
刘丽
收藏  |  浏览/下载:228/0  |  提交时间:2015/09/02
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文  OAI收割
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10
作者:  
Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng)
  |  收藏  |  浏览/下载:19/0  |  提交时间:2017/09/21