机构

• 长春应用化学研究所 [4]
• 化学研究所 [2]
• 长春光学精密机械与物... [1]
• 宁波材料技术与工程研... [1]
• 上海技术物理研究所 [1]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [7]
• 会议论文 [2]

发表日期

• 2017 [1]
• 2016 [1]
• 2014 [1]
• 2013 [1]
• 2011 [2]
• 2010 [1]
• 更多

学科主题

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序作者升序作者降序题名升序题名降序发表日期升序发表日期降序 Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors 期刊论文  OAI收割 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 3 作者:  Wang JL;  Hu WD   |  收藏  |  浏览/下载：42/0  |  提交时间：2018/11/20 FIELD-EFFECT TRANSISTORS  THIN-FILM-TRANSISTOR  MOS2  GRAPHENE  HETEROSTRUCTURES  POLYMER  PHOTOTRANSISTORS  OPTOELECTRONICS  ELECTRONICS  MONOLAYER   Highly Sensitive Thin-Film Field-Effect Transistor Sensor for Ammonia with the DPP-Bithiophene Conjugated Polymer Entailing Thermally Cleavable tert-Butoxy Groups in the Side Chains 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 6, 页码: 3635-3643 作者:  Yang, Yang;  Zhang, Guanxin;  Luo, Hewei;  Yao, Jingjing;  Liu, Zitong 收藏  |  浏览/下载：31/0  |  提交时间：2017/01/23 thin-film field-effect transistor  conjugated polymer  ammonia sensor  diketopyrrolopyrrole  thermally cleavable groups   Self-assembled transparent a-IGZO based TFTs for flexible sensing applications 会议论文  OAI收割 AUG 22-24, 2014 作者:  Yun, Feng;  Liu, Yanghui;  Li, Yuanjie;  Li, YJ;  Wan, Qing   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/01/12 Transparent Amorphous Oxide Semiconductor  Ingazno Thin Film  Field Effect Transistor  Proton-conducting Solid Electrolyte  Sensors  Magnetron Sputtering   Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 103, 期号: 24, 页码: 文献号：243302 Wang LJ; Li YP; Song XF; Liu X; Zhang L; Yan DH 收藏  |  浏览/下载：32/0  |  提交时间：2014/04/14 FIELD-EFFECT TRANSISTORS  THIN-FILM-TRANSISTOR  ORGANIC SEMICONDUCTOR  CAPACITANCE   Different structures and crystallinities of poly(3-hexylthiophene) films prepared from aged solutions 期刊论文  OAI收割 colloids and surfaces a-physicochemical and engineering aspects, 2011, 卷号: 380, 期号: 1-3, 页码: 334-340 Xue LJ; Yu XH; Han YC 收藏  |  浏览/下载：36/0  |  提交时间：2012/06/11 POLYTHIOPHENE THIN-FILM  FIELD-EFFECT TRANSISTOR  CONJUGATED POLYMERS  REGIOREGULAR POLY(3-HEXYLTHIOPHENE)  PHOTOVOLTAIC CELLS  HIGH-MOBILITY  ORGANIZATION  TRANSPORT  SOLVENT  ORDER   Adhesive lithography for fabricating organic electronic and optoelectronics devices 期刊论文  OAI收割 nanoscale, 2011, 卷号: 3, 期号: 7, 页码: 2663-2678 Wang Z; Xing RB; Yu XH; Han YC 收藏  |  浏览/下载：45/0  |  提交时间：2012/06/11 THIN-FILM TRANSISTORS  FIELD-EFFECT TRANSISTOR  LIGHT-EMITTING-DIODES  SELF-ASSEMBLED MONOLAYERS  SOFT LITHOGRAPHY  METAL-FILMS  NANOIMPRINT LITHOGRAPHY  PRINTING TECHNIQUES  ELASTOMERIC STAMP  CHANNEL-LENGTH   The formation of different structures of poly(3-hexylthiophene) film on a patterned substrate by dip coating from aged solution 期刊论文  OAI收割 nanotechnology, 2010, 卷号: 21, 期号: 14, 页码: 文献编号：145303 Xue LJ; Gao X; Zhao K; Liu JG; Yu XH; Han YC 收藏  |  浏览/下载：35/0  |  提交时间：2012/06/07 POLYTHIOPHENE THIN-FILM  FIELD-EFFECT TRANSISTOR  LIGHT-EMITTING-DIODES  REGIOREGULAR POLY(3-HEXYLTHIOPHENE)  CONJUGATED POLYMERS  PHOTOVOLTAIC CELLS  SINGLE-CRYSTALS  EFFECT MOBILITY  SURFACES  GROWTH   Comparative study of field-effect mobility with different expressions in organic thin film transistors 期刊论文  OAI收割 OPTIK, 2009, 卷号: 120, 期号: 13, 页码: 668-672 作者:  Guo, Wenbin;  Shen, Liang;  Ma, Dongge   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/04/09 Field-effect Mobility  Organic Thin Film Transistor  Modeling   Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Zhang Z.-W. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit  the luminous uniformity has great improved  but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED  such as low field effect mobility  low output current and threshold voltage shift. In this article  a two-a-Si:H TFT pixel circuit was designed  which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing  the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments  the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal  the variety of Vth  is smallest  about 1.28V after a fixed stressing time of 1.33104min  which shows the novel data signal timing can improved the driving TFT output-input current stability.