机构

• 长春光学精密机械与物... [2]
• 苏州纳米技术与纳米仿... [1]
• 化学研究所 [1]
• 数学与系统科学研究院 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [3]
• 会议论文 [2]

发表日期

• 2021 [1]
• 2012 [1]
• 2010 [1]
• 2007 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 卷号: 68, 期号: 4, 页码: 2049-2055 作者:  Guo, Jingrui;  Zhao, Ying;  Yang, Guanhua;  Chuai, Xichen;  Lu, Wenhao   |  收藏  |  浏览/下载：59/0  |  提交时间：2021/06/01 Electric potential  Solid modeling  Logic gates  Integrated circuit modeling  Numerical models  Thin film transistors  Analytical models  Analytical models  independent dual gate (IDG) amorphous In-Ga-Zn-O thin-film transistors (IDG a-IGZO TFTs)  Schroder method  surface potential  threshold compensation effect   Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target 期刊论文  OAI收割 IEEE Transactions on Electron Device, 2012, 卷号: 59, 期号: 9, 页码: 2555-2558 作者:  Yong Cai（蔡勇） 收藏  |  浏览/下载：31/0  |  提交时间：2013/01/22 Reactive RF sputtering  ZnO films  thin-film transistors (TFTs)  zinc target   Fabrication of ZnO thin film transistors based on the substrate of glass (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Tang W.;  Gao X.;  Wang C. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 Abstract. In our paper  we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully  the Ion/off ratio is 104. (2010) Trans Tech Publications.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   Flexible organic complementary circuits 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 卷号: 52, 期号: 4, 页码: 618-622 作者:  Klauk, H;  Halik, M;  Zschieschang, U;  Eder, F;  Rohde, D   |  收藏  |  浏览/下载：17/0  |  提交时间：2019/04/09 Organic Integrated Circuits  Organic Thin-film Transistors (Tfts)  Polymer Gate Dielectrics