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	Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文 OAI收割 journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H 收藏 \| 浏览/下载：62/5 \| 提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION MG-DOPED GAN UNDOPED GAN PHOTOLUMINESCENCE BANDS THREADING DISLOCATIONS POSITRON-ANNIHILATION GROWTH STOICHIOMETRY GALLIUM NITRIDE
	Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文 OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917 作者: Jiang DS; Zhu JJ; Li XY; Zhang SM; Zhao DG 收藏 \| 浏览/下载：58/0 \| 提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION MG-DOPED GAN UNDOPED GAN PHOTOLUMINESCENCE BANDS THREADING DISLOCATIONS POSITRON-ANNIHILATION GROWTH STOICHIOMETRY GALLIUM NITRIDE
	C and Si ion implantation and the origins of yellow luminescence in GaN 期刊论文 OAI收割 Applied Physics a-Materials Science & Processing, 2004, 卷号: 79, 期号: 1, 页码: 139-142 L. Dai; G. Z. Ran; J. C. Zhang; X. F. Duan; W. C. Lian; G. G. Qin 收藏 \| 浏览/下载：14/0 \| 提交时间：2012/04/14 detected magnetic-resonance vapor-phase epitaxy undoped gan photoluminescence vacancies nitrides
	Effects of Si ion implantation and post-annealing on yellow luminescence from GaN 期刊论文 OAI收割 Physica B-Condensed Matter, 2002, 卷号: 322, 期号: 1-2, 页码: 51-56 L. Dai; J. C. Zhang; Y. Chen; G. Z. Ran; G. G. Qin 收藏 \| 浏览/下载：31/0 \| 提交时间：2012/04/14 photoluminescence yellow luminescence ion implantation GaN detected magnetic-resonance vapor-phase epitaxy laser-diodes undoped gan photoluminescence vacancies layers origin
	Red emission from GaN nanocrystallite solids 期刊论文 OAI收割 MODERN PHYSICS LETTERS B, 2000, 卷号: 14, 期号: 16, 页码: 583 Cao, YG; Chen, XL; Lan, YC; Li, JY; Zhang, Y; Xu, YP; Xu, T; Liang, JK 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/24 UNDOPED GAN DEFECTS LUMINESCENCE GALLIUM EPITAXY OXYGEN