机构

• 半导体研究所 [25]
• 金属研究所 [5]
• 苏州纳米技术与纳米仿... [5]
• 长春光学精密机械与物... [3]
• 高能物理研究所 [3]
• 中国科学院大学 [3]
• 更多

采集方式

• OAI收割 [38]
• iSwitch采集 [16]

内容类型

• 期刊论文 [52]
• 会议论文 [2]

发表日期

• 2019 [4]
• 2014 [1]
• 2011 [2]
• 2010 [8]
• 2009 [32]
• 2008 [7]
• 更多

学科主题

• 半导体物理 [7]
• 半导体材料 [5]
• Physics [3]

筛选

浏览/检索结果: 共54条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 35, 页码: 32449 作者:  Xu, Meng;  Yan, Jian-Min;  Guo, Lei;  Wang, Hui;  Xu, Zhi-Xue   |  收藏  |  浏览/下载：83/0  |  提交时间：2019/12/26 ferroelectric field effect  ferroelectric single crystal  electronic properties  wide-band-gap oxide semiconductors films  magnetoresistance   High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 3 作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang   |  收藏  |  浏览/下载：29/0  |  提交时间：2020/08/24 Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文  OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu   |  收藏  |  浏览/下载：45/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文  OAI收割 Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133 作者:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi   |  收藏  |  浏览/下载：50/0  |  提交时间：2020/08/24 Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors   Temperature dependence of refractive indices for 4H-and 6H-SiC 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 11 Xu, CH; Wang, SC; Wang, G; Liang, JK; Wang, SP; Bai, L; Yang, JW; Chen, XL 收藏  |  浏览/下载：35/0  |  提交时间：2015/04/14 infrared spectra  refractive index  silicon compounds  thermo-optical effects  visible spectra  wide band gap semiconductors   Effect of transverse electric field on helical edge states in a quantum spin-hall system 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 22, 页码: 3 作者:  Liu, Genhua;  Zhou, Guanghui;  Chen, Yong-Hai 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Cadmium compounds  Ii-vi semiconductors  Mercury compounds  Quantum hall effect  Semiconductor quantum wells  Spin hall effect  Wide band gap semiconductors   Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25 作者:  Sun, YF (孙云飞);  Sun, JD (孙建东);  Zhou, Y (周宇);  Tan, RB (谭仁兵);  Zeng, CH (曾春红) 收藏  |  浏览/下载：43/0  |  提交时间：2012/08/24 aluminium compounds  gallium compounds  high electron mobility transistors  III-V semiconductors  photoconductivity  photodetectors  semiconductor device noise  terahertz wave detectors  wide band gap semiconductors   Study of the synthesis of tungsten trioxide nanostructured arrays by tungsten hot filament chemical vapor deposition method and their field emission properties 会议论文  OAI收割 22nd International Vacuum Nanoelectronics Conference, Hamamatsu JAPAN, 2009-06 Lu D (卢狄); Liang B; Ogino A; Nagatsu M 收藏  |  浏览/下载：17/0  |  提交时间：2010/12/30 chemical vapour deposition  field emission  nanofabrication  tungsten compounds  wide band gap semiconductors  X-ray diffraction   Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors 期刊论文  OAI收割 Applied Physics Letters, 2010, 期号: 6 作者:  Zhang BS (张宝顺);  Cai Y (蔡勇) 收藏  |  浏览/下载：207/64  |  提交时间：2010/12/31 aggregation  aluminium  aluminium compounds  gallium compounds  gold  high electron mobility transistors  III-V semiconductors  nickel  ohmic contacts  rapid thermal annealing  semiconductor-metal boundaries  surface morphology  surface roughness  titanium  transmission electron microscopy  wide band gap semiconductors  X-ray chemical analysis   Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3 作者:  Zhang, L.;  Ding, K.;  Yan, J. C.;  Wang, J. X.;  Zeng, Y. P. 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12 Aluminium compounds  Electron gas  Gallium compounds  Iii-v semiconductors  Mocvd  Polarisation  Semiconductor doping  Semiconductor thin films  Wide band gap semiconductors