机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2011 [12]

学科主题

• 半导体材料 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 23, 页码: art. no. 232116 作者:  Jiang CY;  Yu JL 收藏  |  浏览/下载：50/6  |  提交时间：2011/07/15 OPTICAL-PROPERTIES  DOTS   Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705 Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06 FIELD-EFFECT TRANSISTORS  INTERFACE ROUGHNESS  QUANTUM-WELLS  MOBILITY  HETEROJUNCTION  TRANSPORT  MODEL   Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106 Jiang CY; Ma H; Yu JL; Liu Y; Chen YH 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/06 QUANTUM WIRES  OPTICAL-PROPERTIES  RECTIFICATION  FLUCTUATIONS   Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY 收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05 SELF-ORGANIZED ISLANDS  MOLECULAR-BEAM-EPITAXY  OPTICAL-PROPERTIES  SURFACES  EMISSION  DENSITY  SIZE   Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas 期刊论文  OAI收割 physical review b, 2011, 卷号: 84, 期号: 7, 页码: 75341 作者:  Jiang CY 收藏  |  浏览/下载：13/0  |  提交时间：2011/09/14 PHOTOMAGNETISM  METALS   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文  OAI收割 ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275 Liu GP (Liu Guipeng); Wu J (Wu Ju); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Li CM (Li Chengming); Sang L (Sang Ling); Song YF (Song Yafeng); Shi K (Shi Kai); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：11/0  |  提交时间：2012/02/22 Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512 Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG 收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY   Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103 Li GD; Jiang C; Zhu QS; Sakaki H 收藏  |  浏览/下载：60/9  |  提交时间：2011/07/05 HETEROJUNCTION  MOBILITY  SCATTERING  PHYSICS  FIELD   Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.122104 作者:  Yu JL 收藏  |  浏览/下载：44/2  |  提交时间：2011/07/05