机构

• 物理研究所 [8]
• 半导体研究所 [8]
• 长春光学精密机械与物... [2]
• 上海微系统与信息技术... [2]
• 上海光学精密机械研究... [1]

采集方式

• OAI收割 [18]
• iSwitch采集 [3]

内容类型

• 期刊论文 [19]
• 会议论文 [2]

发表日期

• 2005 [21]

学科主题

• 半导体材料 [3]
• Applied [2]
• Physics [2]
• 半导体物理 [2]
• 光学;量子光学 [1]

筛选

浏览/检索结果: 共21条，第1-10条 帮助 限定条件 发表日期：2005     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Theoretical investigation of intersubband transition in alxga1-xn/gan/alyga1-yn step quantum well 期刊论文  iSwitch采集 Physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 453-461 作者:  Li, JM;  Lu, YW;  Han, XX;  Wu, JJ;  Liu, XL 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Quantum wells  Semiconductors  Intersubband transitions   Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Qin L.;  Jiang H.;  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25 We describe design  numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm  and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure  drawing on the advantages of both. With periodical gain element structure  optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results  and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Spin filtering and spin-polarization reversal in multilayered ferromagnetic metal/semiconductor heterostructures 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2005, 卷号: 98, 期号: 5 Guo, Y; Yu, XW; Li, YX 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/24 2-DIMENSIONAL ELECTRON GASES  QUANTUM-WELLS  ORBIT INTERACTION  INVERSION-LAYERS  ROOM-TEMPERATURE  INJECTION  SEMICONDUCTOR  BARRIER  SPINTRONICS  TRANSPORT   Effects of multi-band mixing on the spin-polarized transport in quasi-one-dimensional electron waveguides 期刊论文  OAI收割 PHYSICS LETTERS A, 2005, 卷号: 335, 期号: 4, 页码: 316 Su, H; Gu, BY 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17 ORBIT INTERACTION  QUANTUM WIRES  CONDUCTANCE  BARRIER  FILTER  WELLS   Coherent wave-packet evolution in coupled bands 期刊论文  OAI收割 PHYSICAL REVIEW B, 2005, 卷号: 72, 期号: 8 Culcer, D; Yao, Y; Niu, Q 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17 ELECTRICAL SPIN INJECTION  BERRY-PHASE  POLARIZED TRANSPORT  QUANTUM-WELLS  SEMICONDUCTORS  ELECTRONS  DYNAMICS  MODEL  GAS   Alloy compositional fluctuation in InAlGaN epitaxial films 期刊论文  OAI收割 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 卷号: 80, 期号: 3, 页码: 649 Li, DB; Dong, X; Huang, J; Liu, X; Xu, Z; Zhang, Z; Wang, Z 收藏  |  浏览/下载：9/0  |  提交时间：2013/09/17 MULTIPLE-QUANTUM WELLS  ALINGAN/GAN HETEROSTRUCTURES  OPTICAL-PROPERTIES  QUATERNARY ALLOYS  MOLECULAR-BEAM  GROWTH  INXALYGA1-X-YN   Intersubband transition rates of localized electron-phonon interaction in structural defect superlattices 期刊论文  OAI收割 PHYSICS LETTERS A, 2005, 卷号: 334, 期号: 1, 页码: 55 Sang, HY; Gu, BY; Wang, XH; Chen, KQ 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/18 SEMICONDUCTOR QUANTUM-WELLS  DOUBLE HETEROSTRUCTURES  CASCADE LASER  COLLECTIVE EXCITATIONS  RAMAN-SCATTERING  RELAXATION  MODES  SYSTEMS  SLAB  POLARIZABILITY   Observation of Wannier-Stark ladders in multi-quantum well structures 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 卷号: 38, 期号: 12, 页码: 1989 Cheng, XK; Zhang, J; Zhou, JM; Huang, Q 收藏  |  浏览/下载：11/0  |  提交时间：2013/09/24 ELECTRIC-FIELD  QUANTUM-WELLS  SUPERLATTICES  LOCALIZATION   Interface properties of InAs/AlSb superlattices characterized by grazing incidence x-ray reflectivity 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 7, 页码: 1729 Li, ZH; Guo, LW; Wu, SD; Wang, WX; Huang, Q; Zhou, JM 收藏  |  浏览/下载：12/0  |  提交时间：2013/09/18 QUANTUM-WELLS  BARRIERS  BONDS  GAAS