机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [7]

发表日期

• 2011 [1]
• 2010 [2]
• 2009 [1]
• 2006 [1]
• 2002 [1]
• 1998 [1]
• 更多

学科主题

• 半导体材料 [7]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文  OAI收割 physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302 Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 ENTANGLED PHOTON PAIRS  SEMICONDUCTOR  SPIN   Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104 Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing) 收藏  |  浏览/下载：12/0  |  提交时间：2010/12/28 LIGHT-EMITTING-DIODES  WURTZITE SEMICONDUCTORS  QUANTUM-WELLS  MATRIX-ELEMENTS  SEMIPOLAR  SAPPHIRE   In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516 Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.) 收藏  |  浏览/下载：293/18  |  提交时间：2010/08/17 MOLECULAR-BEAM EPITAXY  STRAIN RELAXATION  GROWTH TEMPERATURE  INTERFACE  ALLOYS  GAAS  HETEROSTRUCTURES  MICROSTRUCTURE  GANXAS1-X  NITROGEN   Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：69/0  |  提交时间：2010/03/08 aluminium compounds  gallium arsenide  III-V semiconductors  internal stresses  reflectivity  semiconductor heterojunctions  semiconductor quantum wells   Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2006, 卷号: 203, 期号: 15, 页码: 3788-3792 Gao, HY (Gao, Haiyong); Yan, FW (Yan, Fawang); Li, JM (Li, Jinmin); Wang, JX (Wang, Junxi); Yan, JC (Yan, Jianchang) 收藏  |  浏览/下载：49/0  |  提交时间：2010/03/29 TIME-RESOLVED PHOTOLUMINESCENCE   Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者:  Xu B 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 low dimensional structures  strain  molecular beam epitaxy  quantum dots  ELECTRONIC-STRUCTURE  PHOTOLUMINESCENCE  INTERDIFFUSION  TRANSITIONS  SPECTRA   Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630 Wang HM; Zeng YP; Zhou HW; Kong MY 收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  HALL ELEMENTS  GAAS  MISORIENTATION  DISTORTION  LAYERS  MBE  SI  HETEROSTRUCTURES  GROWTH