机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [7]

发表日期

• 2014 [2]
• 2013 [2]
• 2012 [2]
• 2011 [1]

学科主题

• 半导体器件 [7]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High-power picosecond 355 nm laser based on La2CaB10O19 crystal 期刊论文  OAI收割 optics letters, 2014, 卷号: 39, 期号: 11, 页码: 3305-3307 Li, K; Zhang, L; Xu, DG; Zhang, GC; Yu, HJ; Wang, YY; Shan, FX; Wang, LR; Yan, C; Wu, YC; Lin, XC; Yao, JQ 收藏  |  浏览/下载：18/0  |  提交时间：2015/03/20 Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes 期刊论文  OAI收割 optics letters, OPTICS LETTERS, 2014, 2014, 卷号: 39, 39, 期号: 2, 页码: 379-382, 379-382 作者:  Wei, TB;  Ji, XL;  Wu, K;  Zheng, HY;  Du, CX   |  收藏  |  浏览/下载：21/0  |  提交时间：2015/03/25 Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages 期刊论文  OAI收割 japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 2013, 卷号: 52, 52, 期号: 4, 页码: 040207, 040207 作者:  Du, Chengxiao;  Geng, Chong;  Zheng, Haiyang;  Wei, Tongbo;  Chen, Yu   |  收藏  |  浏览/下载：27/0  |  提交时间：2013/08/27 Influence of Ni and Au/Ni catalysts on GaN nanowire growth 期刊论文  OAI收割 physica status solidi (a) applications and materials science, Physica Status Solidi (A) Applications and Materials Science, 2013, 2013, 卷号: 210, 210, 期号: 12, 页码: 2689-2692, 2689-2692 作者:  Zhao, Danna;  Huang, Hui;  Wu, Haibo;  Ren, Mingkun;  Zhu, Huichao   |  收藏  |  浏览/下载：25/0  |  提交时间：2014/04/28 Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays 期刊论文  OAI收割 ieee electron device letters, IEEE ELECTRON DEVICE LETTERS, 2012, 2012, 卷号: 33, 33, 期号: 6, 页码: 857-859, 857-859 作者:  Wei, TB;  Wu, K;  Chen, Y   |  收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17 Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography 期刊论文  OAI收割 applied physics letters, Applied Physics Letters, 2012, 2012, 卷号: 101, 101, 期号: 21, 页码: 211111, 211111 作者:  Wei, Tongbo;  Wu, Kui;  Lan, Ding;  Yan, Qingfeng;  Chen, Yu   |  收藏  |  浏览/下载：16/0  |  提交时间：2013/04/22 High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722 Feng Zhang; Guosheng Sun; Huolin Huang; Zhengyun Wu; Lei Wang; Wanshun Zhao; Xingfang Liu; Guoguo Yan; Liu Zheng; Lin Dong; Yiping Zeng 收藏  |  浏览/下载：26/0  |  提交时间：2012/09/04 Metal–insulator–semiconductor (MIS) devices  photodetectors  ultraviolet (UV) detectors