机构

• 半导体研究所 [9]

采集方式

• OAI收割 [7]
• iSwitch采集 [2]

内容类型

• 期刊论文 [8]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2010 [3]
• 2008 [1]
• 2006 [3]

学科主题

• 半导体物理 [4]
• 半导体材料 [2]
• 微电子学 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates 期刊论文  iSwitch采集 Nanoscale research letters, 2011, 卷号: 6, 页码: 7 作者:  Li, Tianfeng;  Chen, Yonghai;  Lei, Wen;  Zhou, Xiaolong;  Luo, Shuai 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 6, 页码: 64001, 64001 作者:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(zhangrenping@semi.ac.cn)   |  收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Aspect ratio  Current density  Drain current  Electric network analysis  Electric network analyzers  Electron mobility  Fabrication  Gallium nitride  Ohmic contacts  Passivation  Silicon nitride  Silicon wafers  Aspect Ratio  Current Density  Drain Current  Electric Network Analysis  Electric Network Analyzers  Electron Mobility  Fabrication  Gallium Nitride  Ohmic Contacts  Passivation  Silicon Nitride  Silicon Wafers   STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文  OAI收割 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：252/64  |  提交时间：2010/08/16 Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文  OAI收割 journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102 Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia 收藏  |  浏览/下载：17/0  |  提交时间：2011/08/16 Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 24, 页码: article no.245423, Article no.245423 作者:  Zhao WJ;  Tan PH;  Zhang J;  Liu JA;  Zhao, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn   |  收藏  |  浏览/下载：79/9  |  提交时间：2011/07/05 RAMAN-SPECTROSCOPY  BILAYER GRAPHENE  GRAPHITE  SCATTERING  SPECTRA  CARBON  FILMS  Raman-spectroscopy  Bilayer Graphene  Graphite  Scattering  Spectra  Carbon  Films   Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals 期刊论文  OAI收割 epl, 2008, 卷号: 84, 期号: 6, 页码: art. no. 67003 Xu XS; Chen HD; Yamada T; Otomo A 收藏  |  浏览/下载：382/110  |  提交时间：2010/03/08 BAND-GAP MATERIALS  SPONTANEOUS EMISSION  QUANTUM-DOT  FLUORESCENCE   Theoretical analysis about the influence of channel layer thickness on the 2d electron gas and its distribution in inp-based high-electron-mobility transistors 期刊论文  iSwitch采集 Acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682 作者:  Li Dong-Lin;  Zeng Yi-Ping 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Hemt  Heterojunction  Two dimentional electron gas  Self-consistent calculation   Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302 作者:  Jiang DS 收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11 ROOM-TEMPERATURE  SILICON  SEMICONDUCTORS  DISLOCATIONS  SPECTRA   Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 HEMT  heterojunction  two dimentional electron gas  self-consistent calculation  FIELD-EFFECT TRANSISTOR  TRANSPORT-PROPERTIES  QUANTUM-WELLS  HEMTS  FREQUENCY  DENSITY