中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 新疆理化技术研究所 [4]
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  • 2020 [4]
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Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文  OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ]
  |  收藏  |  浏览/下载：12/0  |  提交时间：2020/12/09
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文  OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]
  |  收藏  |  浏览/下载：25/0  |  提交时间：2020/07/06
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL 期刊论文  OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:  Cai, YL (Cai, Yulong)[ 1,2 ];  Wen, L (Wen, Lin)[ 3 ];  Li, YD (Li, Yudong)[ 3 ];  Guo, Q (Guo, Qi)[ 3 ];  Zhou, D (Zhou, Dong)[ 3 ]
  |  收藏  |  浏览/下载：15/0  |  提交时间：2020/09/09
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors 期刊论文  OAI收割
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]
  |  收藏  |  浏览/下载：15/0  |  提交时间：2021/03/19