中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [10]
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OAI收割 [10]
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期刊论文 [10]
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2017 [1]
2015 [1]
2011 [1]
2010 [1]
2003 [2]
2002 [4]
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学科主题
半导体材料 [10]
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Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film
期刊论文
OAI收割
small, 2017, 卷号: 13, 页码: 1604179
作者:
Junhua Meng
;
Xingwang Zhang
;
Ye Wang
;
Zhigang Yin
;
Heng Liu
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2018/06/01
Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
期刊论文
OAI收割
nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 16046-16053
Junhua Meng
;
Xingwang Zhang
;
Haolin Wang
;
Xibiao Ren
;
Chuanhong Jin
;
Zhigang Yin
;
Xin Liu
;
Heng Liu
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2016/03/23
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:
Jin P
收藏
  |  
浏览/下载:43/4
  |  
提交时间:2011/07/15
LIGHT-EMITTING-DIODES
OPTICAL-PROPERTIES
TUNING RANGE
NM
EMISSION
SPECTRUM
SPECTROSCOPY
Structure and properties of InAs/AlAs quantum dots for broadband emission
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 10, 页码: art. no. 103515
Meng XQ (Meng X. Q.)
;
Jin P (Jin P.)
;
Liang ZM (Liang Z. M.)
;
Liu FQ (Liu F. Q.)
;
Wang ZG (Wang Z. G.)
;
Zhang ZY (Zhang Z. Y.)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/12/28
CHEMICAL-VAPOR-DEPOSITION
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
作者:
Xu B
;
Jin P
;
Li CM
;
Ye XL
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
low dimensional structures
nanostructures
quantum dots
molecular beam epitaxy
semiconducting III-V materials
laser diode
TIME-RESOLVED PHOTOLUMINESCENCE
Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 198-202
作者:
Jin P
;
Li CM
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/08/12
lattice-mismatch
microstructure
radiation
X-ray diffraction
molecular beam epitaxy
infrared devices
quantum cascade laser
MU-M
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:
Li CM
;
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
quantum dots
strain
molecular beam epitaxy
superluminescent diodes
1.3 MU-M
HIGH-POWER
INTEGRATED ABSORBER
INAS ISLANDS
SPECTRUM
WINDOW
LAYER
SIZE
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者:
Xu B
;
Li CM
;
Jin P
;
Ye XL
;
Li DB
收藏
  |  
浏览/下载:97/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
nanostructures
molecular beam epitaxy
semiconducting III-V materials
laser diodes
TEMPERATURE-DEPENDENCE
THRESHOLD CURRENT
MU-M
LASERS
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
作者:
Jin P
;
Ye XL
;
Li CM
;
Xu B
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/08/12
low dimensional structures
molecular beam epitaxy
quantum dots
semiconducting III-V materials
PHOTOLUMINESCENCE
A novel line-order of InAs quantum dots on GaAs
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73
作者:
Li CM
;
Xu B
;
Jin P
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
low dimensional structures
strain
molecular beam epitaxy
quantum dots
semiconducting III-V materials
SHAPE TRANSITION
PHOTOLUMINESCENCE
FABRICATION
DEPOSITION
WIRES
SITU