机构

• 半导体研究所 [26]

采集方式

• OAI收割 [26]

内容类型

• 会议论文 [26]

发表日期

• 2011 [2]
• 2008 [1]
• 2007 [1]
• 2004 [2]
• 2003 [1]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [14]
• 光电子学 [9]
• 微电子学 [2]
• 半导体物理 [1]

筛选

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Realization of 16-channel digital PGC demodulator for fiber laser sensor array 会议论文  OAI收割 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, Wuhan, PEOPLES R CHINA, nov 02-05, 2010, NOV 02-05, 2010 作者:  Wang L (Wang Lin);  He J (He Jun);  Li F (Li Fang);  Liu YL (Liu Yu-Liang)   |  收藏  |  浏览/下载：17/0  |  提交时间：2011/07/26 High performance wavelength demodulator for DFB fiber laser sensor using novel PGC algorithm and reference compensation method 会议论文  OAI收割 21st international conference on optical fiber sensors, ottawa, canada, Ottawa, CANADA, 2011, 2011 作者:  He J (He Jun);  Li F (Li Fang);  Zhang WT (Zhang Wentao);  Wang L (Wang Lin);  Xu TW (Xu Tuanwei)   |  收藏  |  浏览/下载：18/0  |  提交时间：2011/12/13 Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文  OAI收割 6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007 作者:  Chen P 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 pockels effect   On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文  OAI收割 conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007 Shou-Li Z; De-Ping X; Ya-Li I; Hai-Lin C; Yin-Zhe C; Ang M; Ji-He L; Jun-Hua G 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 RCE- p-i-n-PD   Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Li, N; Zhang, GQ; Liu, ZL; Fan, K; Zheng, ZS; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：127/22  |  提交时间：2010/03/29 SIMOX  fluorine  ionizing radiation   Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：141/31  |  提交时间：2010/03/29 fluorine  SIMOX  charge trapping  radiation  SIO2   High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY   Epitaxial growth of SiC on complex substrates 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS