中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
新疆理化技术研究所 [14]
采集方式
OAI收割 [14]
内容类型
期刊论文 [14]
发表日期
2021 [2]
2020 [1]
2019 [1]
2018 [4]
2017 [1]
2014 [3]
更多
学科主题
筛选
浏览/检索结果:
共14条,第1-10条
帮助
限定条件
专题:新疆理化技术研究所
第一署名单位
第一作者单位
通讯作者单位
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier
期刊论文
OAI收割
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:
Xiang, CAF (Xiang, Chuanfeng) 1 , 2
;
Yao, S (Yao, Shuai) 1 , 3
;
Lu, W (Lu, Wu) 1 , 2
;
Li, XL (Li, Xiaolong) 1
;
Yu, X (Yu, Xin) 1
  |  
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2021/08/06
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Yu, XF (Yu, Xuefeng)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2020/12/11
SiC MOSFET
total ionizing dose irradiation
time-dependent dielectric breakdown
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
  |  
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
作者:
Li, XL (Li Xiao-Long)[ 1,2,3 ]
;
Lu, W (Lu Wu)[ 1,2 ]
;
Wang, X (Wang Xin)[ 1,2,3 ]
;
Guo, Q (Guo Qi)[ 1,2 ]
;
He, CF (He Cheng-Fa)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2018/09/27
Bipolar Circuit
Enhanced Low-dose-rate Sensitivity
Accelerated Evaluation Method
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
期刊论文
OAI收割
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
作者:
Li, XL (Li, Xiao-Long)
;
Lu, W (Lu, Wu)
;
Wang, X (Wang, Xin)
;
Yu, X (Yu, Xin)
;
Guo, Q (Guo, Qi)
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2018/05/14
Ionizing Radiation Damage
Enhanced Low Dose Rate Sensitivity (Eldrs)
Switched Temperature Irradiation
Gate-controlled Lateral Pnp Transistor (glPnp)
Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 8, 页码: 1-4
作者:
Yu, X (Yu, Xin)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Guo, Q (Guo, Qi)[ 1,2 ]
;
Sun, J (Sun, Jing)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2018/10/19
Using temperature-switching approach to evaluate the ELDRS of bipolar devices
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
作者:
Li, XL (Li, Xiaolong)
;
Lu, W (Lu, Wu)
;
Wang, X (Wang, Xin)
;
Guo, Q (Guo, Qi)
;
Yu, X (Yu, Xin)
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2018/07/24
Bipolar Technology
Co-60 Gamma Irradiation
Enhanced Low-dose Rate Sensitivity (Eldrs)
Temperature-switching Approach (Tsa)
Characteristics of p-i-n diodes basing on displacement damage detector
期刊论文
OAI收割
RADIATION PHYSICS AND CHEMISTRY, 2017, 卷号: 139, 期号: 10, 页码: 11-16
作者:
Sun, J (Sun Jing)[ 1,2 ]
;
Guo, Q (Guo Qi)[ 1 ]
;
Yu, X (Yu Xin)[ 1,2 ]
;
He, CF (He Cheng-Fa)[ 1 ]
;
Shi, WL (Shi Wei-Lei)[ 1 ]
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/07/10
Displacement damage
NIEL
P-i-n photodiode
Damage enhancement factor
Research on dark signal degradation in Co-60 gamma-ray-irradiated CMOS active pixel sensor
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 5
作者:
Wang Bo
;
Li Yu-Dong
;
Guo Qi
;
Liu Chang-Ju
;
Wen Lin
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2014/11/11
CMOS APS
dark signal
Co-60 gamma-rays
damage mechanism