中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [103]
采集方式
OAI收割 [94]
iSwitch采集 [9]
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期刊论文 [73]
会议论文 [30]
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2011 [9]
2010 [6]
2009 [7]
2008 [8]
2007 [3]
2006 [12]
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学科主题
半导体物理 [47]
半导体材料 [24]
光电子学 [15]
人工智能 [5]
半导体化学 [2]
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专题:半导体研究所
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Long wavelength infrared inas/gasb superlattice photodetectors with insb-like and mixed interfaces
期刊论文
iSwitch采集
Ieee journal of quantum electronics, 2011, 卷号: 47, 期号: 12, 页码: 1475-1479
作者:
Zhang, Yanhua
;
Ma, Wenquan
;
Cao, Yulian
;
Huang, Jianliang
;
Wei, Yang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/05/12
Inas/gasb
Interfaces
Long wavelength infrared photodetector
Type ii superlattice
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure
期刊论文
iSwitch采集
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi, Yang
;
Wang, XiaoLiang
;
Yang, CuiBai
;
Xiao, HongLing
;
Wang, CuiMei
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
First-principles study of magnetic properties in mo-doped graphene
期刊论文
iSwitch采集
Journal of physics-condensed matter, 2011, 卷号: 23, 期号: 34, 页码: 6
作者:
Kang, Jun
;
Deng, Hui-Xiong
;
Li, Shu-Shen
;
Li, Jingbo
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
OAI收割
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/12/28
NARROW-GAP SEMICONDUCTOR
INVERSION-ASYMMETRY
QUANTUM DOTS
BAND
STATES
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ
;
Lin ZJ
;
Corrigan TD
;
Zhao JZ
;
Cao ZF
;
Meng LG
;
Luan CB
;
Wang ZG
;
Chen H
收藏
  |  
浏览/下载:64/6
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
GAN
DEPENDENCE
CONTACTS
STATES
NI
Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 64322
Rui YJ
;
Li SX
;
Xu J
;
Song C
;
Jiang XF
;
Li W
;
Chen KJ
;
Wang QM
;
Zuo YH
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/02/06
SILICON NANOCRYSTALLITES
LUMINESCENCE
CONFINEMENT
PHOTOLUMINESCENCE
MICROCRYSTALS
NANOCLUSTERS
SUPERLATTICE
MULTILAYERS
ELECTRONS
STATES
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
OAI收割
applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Bi, Yang
;
Wang, XiaoLiang
;
Yang, CuiBai
;
Xiao, HongLing
;
Wang, CuiMei
;
Peng, EnChao
;
Lin, DeFeng
;
Feng, Chun
;
Jiang, LiJuan,
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/06/14
Poisson equation
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi Y
;
Lin DF
;
Peng EC
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2011/09/14
2-DIMENSIONAL ELECTRON-GAS
ALGAN/GAN/INGAN/GAN DH-HEMTS
MILLIMETER-WAVE APPLICATIONS
FIELD-EFFECT TRANSISTORS
HETEROJUNCTION FETS
HETEROSTRUCTURES
PASSIVATION
CONFINEMENT
PERFORMANCE
BARRIERS
First-principles study of magnetic properties in Mo-doped graphene
期刊论文
OAI收割
journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 34, 页码: 346001, 346001
作者:
Kang J
;
Deng HX
;
Li SS
;
Li JB
;
Li, SSLi, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2011/09/14
1ST PRINCIPLES
METAL ATOMS
1st Principles
Metal Atoms
Broadband external cavity tunable quantum dot lasers with low injection current density
期刊论文
iSwitch采集
Optics express, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
作者:
Lv, X. Q.
;
Jin, P.
;
Wang, W. Y.
;
Wang, Z. G.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12