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Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体物理 [7]
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Electron g factors and optical properties of InAs quantum ellipsoids 期刊论文  OAI收割
journal of physics-condensed matter, 2006, 卷号: 18, 期号: 20, 页码: 4945-4954
Zhang XW; Zhu YH; Xia JB
收藏  |  浏览/下载:56/0  |  提交时间:2010/04/11
Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation 期刊论文  OAI收割
journal of applied physics, 2002, 卷号: 91, 期号: 9, 页码: 6021-6026
Sun ZZ; Yoon SF; Wu J; Wang ZG
收藏  |  浏览/下载:81/9  |  提交时间:2010/08/12
Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate 期刊论文  OAI收割
journal of applied physics, 2001, 卷号: 90, 期号: 10, 页码: 5111-5114
Liu BL; Liu B; Xu ZY; Ge WK
收藏  |  浏览/下载:115/11  |  提交时间:2010/08/12
Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials 期刊论文  OAI收割
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.115324
Zhang MH; Guo LW; Li HW; Li W; Huang Q; Bao CL; Zhou JM; Liu BL; Xu ZY; Zhang YH; Lu LW
收藏  |  浏览/下载:96/7  |  提交时间:2010/08/12
Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures 期刊论文  OAI收割
physical review b, 2000, 卷号: 61, 期号: 7, 页码: 4743-4747
Kai C
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
High-density InAs nanowires realized in situ on (100) InP 期刊论文  OAI收割
applied physics letters, 1999, 卷号: 75, 期号: 8, 页码: 1173-1175
Li HX; Wu J; Wang ZG; Daniels-Race T
收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
Electronic states of a two-dimensional electron system in a lateral superlattice and a perpendicular magnetic field 期刊论文  OAI收割
physical review b, 1997, 卷号: 56, 期号: 24, 页码: 15744-15751
Wu XG
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12