中国科学院机构知识库网格系统: 检索

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	Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD 期刊论文 OAI收割 applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 2660-2664 part 2 Zhou ZW; Cai ZM; Li C; Lai HK; Chen SY; Yu JZ 收藏 \| 浏览/下载：66/0 \| 提交时间：2010/03/08 Relaxed buffer
	Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE 期刊论文 OAI收割 applied surface science, 2000, 卷号: 167, 期号: 3-4, 页码: 149-151 Zhu QS; Matsushima H; Hiramatsu K; Sawaki N 收藏 \| 浏览/下载：45/0 \| 提交时间：2010/08/12 CHEMICAL VAPOR-DEPOSITION AIN BUFFER LAYER GROWTH FACETS WIRES MOCVD
	The growth of SiC on Si substrates with C2H4 and Si2H6 期刊论文 OAI收割 applied surface science, 1999, 卷号: 148, 期号: 3-4, 页码: 189-195 Wang YS; Li JM; Lin LY; Zhang FF 收藏 \| 浏览/下载：28/0 \| 提交时间：2010/08/12 Si SiC epitaxial growth RHEED Raman spectrum CHEMICAL-VAPOR-DEPOSITION HETEROEPITAXIAL GROWTH HYDROCARBON RADICALS SILICON SURFACES FILMS LAYER MOLECULAR-BEAM EPITAXY
	In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates 期刊论文 OAI收割 applied surface science, 1999, 卷号: 141, 期号: 1-2, 页码: 101-106 作者: Xu B 收藏 \| 浏览/下载：60/0 \| 提交时间：2010/08/12 quantum dot array InxGa1-xAs self-assembly molecular beam epitaxy GaAs (311)B high-index surface structure CHEMICAL-VAPOR-DEPOSITION SELF-ORGANIZATION PHASE EPITAXY INAS SURFACES MICROSTRUCTURES GAAS(100) ALIGNMENT MOLECULAR-BEAM EPITAXY
	Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing 期刊论文 OAI收割 applied surface science, 1998, 卷号: 135, 期号: 1-4, 页码: 205-208 Wang YQ; Liao XB; Ma ZX; Yue GZ; Diao HW; He J; Kong GL; Zhao YW; Li ZM; Yun F 收藏 \| 浏览/下载：26/0 \| 提交时间：2010/08/12 amorphous silicon solid-phase crystallization rapid thermal annealing LPCVD POLYCRYSTALLINE SILICON LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION