中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode 期刊论文  OAI收割
CHINESE PHYSICS B, 2023, 卷号: 32, 期号: 5, 页码: 8
作者:  
Jiang, Kaizhe;  Zhang, Xiaodong;  Tian, Chuan;  Zhang, Shengrong;  Zheng, Liqiang
  |  收藏  |  浏览/下载:5/0  |  提交时间:2023/10/07
Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness 期刊论文  OAI收割
SOLID-STATE ELECTRONICS, 2010, 卷号: 54, 期号: 5, 页码: 579-581
Dong, YQ; Kong, WR; Do, N; Wang, SL; Lee, G
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/24
MEMORY  MODEL