机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2010 [6]

学科主题

• 光电子学 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学    发表日期：2010     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504 Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie) 收藏  |  浏览/下载：123/5  |  提交时间：2010/04/22 MOLECULAR-BEAM EPITAXY  BUFFER LAYERS  DARK CURRENT  PHOTODIODES  LASERS   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316 Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing) 收藏  |  浏览/下载：72/2  |  提交时间：2010/05/04 MOCVD  DBR  high-reflectivity  nitride  SURFACE-EMITTING LASER   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804 Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui) 收藏  |  浏览/下载：63/0  |  提交时间：2010/08/17 in-plane grazing incidence x-ray diffraction  gallium nitride  mosaic structure  biaxial strain  CHEMICAL-VAPOR-DEPOSITION  LATTICE-CONSTANTS  ALN   An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文  OAI收割 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS 收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD