中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2010 [11]
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  • 光电子学 [11]
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浏览/检索结果: 共11条，第1-10条 帮助

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Antibunching and blinking from a single colloidal CdSe quantum dot 期刊论文  OAI收割
science china-physics mechanics & astronomy, 2010, 卷号: 53, 期号: 9, 页码: 1619-1625
Xu X (Xu XingSheng); Chen SA (Chen Shuai); Yamada T (Yamada Toshiki)
收藏  |  浏览/下载：108/1  |  提交时间：2010/09/07
Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文  OAI收割
journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载：103/4  |  提交时间：2010/09/07
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文  OAI收割
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:  Zhang SM
收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05
Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文  OAI收割
solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7
Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H
收藏  |  浏览/下载：71/0  |  提交时间：2010/04/04
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801
Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping)
收藏  |  浏览/下载：40/0  |  提交时间：2010/12/28
Optical properties of light-hole excitons in GaN epilayers 期刊论文  OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 11, 页码: article no.116103
Zhang F; Xu SJ; Ning JQ; Zheng CC; Zhao DG; Yang H; Che CM
收藏  |  浏览/下载：45/3  |  提交时间：2011/07/05
Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method 期刊论文  OAI收割
journal of luminescence, 2010, 卷号: 130, 期号: 3, 页码: 411-414
作者:  Xue CL
收藏  |  浏览/下载：27/0  |  提交时间：2010/04/05
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文  OAI收割
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文  OAI收割
applied physics express, 2010, 卷号: 3, 期号: 7, 页码: art. no. 072001
Huang ZL (Huang Zengli); Wang JF (Wang Jianfeng); Liu ZH (Liu Zhenghui); Xu K (Xu Ke); Yang H (Yang Hui); Cao B (Cao Bing); Han Q (Han Qin); Zhang GJ (Zhang Guiju); Wang CH (Wang Chinhua)
收藏  |  浏览/下载：53/0  |  提交时间：2010/08/17
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文  OAI收割
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui)
收藏  |  浏览/下载：513/2  |  提交时间：2010/08/17