中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [7]
采集方式
OAI收割 [7]
内容类型
会议论文 [7]
发表日期
2008 [2]
2007 [1]
2006 [2]
2003 [1]
1999 [1]
学科主题
半导体材料 [7]
筛选
浏览/检索结果:
共7条,第1-7条
帮助
限定条件
学科主题:半导体材料
内容类型:会议论文
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
OAI收割
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
OAI收割
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
OAI收割
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
OAI收割
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
收藏
  |  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
会议论文
OAI收割
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li Q
;
Fang ZL
;
Xu SJ
;
Li GH
;
Xie MH
;
Tong SY
;
Zhang XH
;
Liu W
;
Chua SJ
收藏
  |  
High quality hydrogenated amorphous silicon films with significantly improved stability
会议论文
OAI收割
symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
收藏
  |