机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 会议论文 [9]

发表日期

• 2008 [1]
• 2006 [1]
• 2004 [1]
• 2003 [1]
• 2001 [3]
• 1999 [1]
• 更多

学科主题

• 半导体材料 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  2-DIMENSIONAL ELECTRON-GAS  BULK GAN  OPTIMIZATION  LAYERS  HEMTS   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS   Influence of heated catalyzer on thermal distribution of substrate in HWCVD system 会议论文  OAI收割 2nd international conference on cat-cvd (hot-wire cvd) process, denver, colorado, sep 10-13, 2002 Zhang Q; Zhu M; Wang L; Liu E 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 AMORPHOUS-SILICON  DEPOSITION   High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 molecular beam epitaxy  high electron mobility transistors  DENSITY   High-quality GaN grown by gas-source MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 characterization  molecular beam epitaxy  gallium compounds  nitrides  piezoelectric materials  semiconducting gallium compounds  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURES  SAPPHIRE  DIODES   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  MOBILITY   Stoichiometry in GaAs grown in outer space measured nondestructively 会议论文  OAI收割 9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999 Chen NF; Zhong XG; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 SEMIINSULATING GALLIUM-ARSENIDE  CRYSTALS  DEFECTS   Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文  OAI收割 6th international conference on the formation of semiconductor interfaces (icfsi-6), cardiff, wales, jun 23-27, 1997 作者:  Xu B 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 ZNSE/GAAS INTERFACE  STATES