中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [11]
发表日期
2011 [11]
学科主题
半导体材料 [11]
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学科主题:半导体材料
发表日期:2011
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
OAI收割
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
收藏
  |  
浏览/下载:68/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
期刊论文
OAI收割
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F
;
Li B
;
Akopian N
;
Perinetti U
;
Chen YH
;
Peeters FM
;
Rastelli A
;
Zwiller V
;
Schmidt OG
收藏
  |  
浏览/下载:71/5
  |  
提交时间:2011/07/05
Quantum Ring
Quantum Dot
Neutral Exciton
Aharonov Bohm Effect
Gate Controlled
Selective Etching
ENERGY-SPECTRA
A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22 mW Output Power and 51 ITU 100 GHz Channels over 43 nm
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.24212
作者:
Pan JQ
收藏
  |  
浏览/下载:48/6
  |  
提交时间:2011/07/05
TUNING RANGE
PERFORMANCE
DESIGN
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells
期刊论文
OAI收割
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong
;
Zeng, Xiang-Bo
;
Peng, Wen-Bo
;
Yao, Wen-Jie
;
Xie, Xiao-Bing
;
Yang, Ping
;
Wang, Chao
;
Wang, Zhan-Guo
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2012/06/14
Amorphous films
Chemical vapor deposition
Energy gap
High resolution electron microscopy
High resolution transmission electron microscopy
Hydrogen
Nanocrystalline silicon
Optical band gaps
Plasma deposition
Plasma enhanced chemical vapor deposition
Raman spectroscopy
Semiconducting silicon compounds
Solar power generation
Thin films
Transmission electron microscopy
High-power quantum dot superluminescent diode with integrated optical amplifier section
期刊论文
OAI收割
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC
;
Jin, P
;
Lv, XQ
;
Li, XK
;
Wang, ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
SPECTRUM
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells
期刊论文
OAI收割
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:
Liu K
;
Tan FR
收藏
  |  
浏览/下载:87/5
  |  
提交时间:2011/07/05
Polyaniline
Electrodeposition
Thin films
Buffer layers
Solar cells
PHOTOVOLTAIC CELLS
POLYMER
NANOWIRES
EFFICIENCY
A high-power tapered and cascaded active multimode interferometer semiconductor laser diode
期刊论文
OAI收割
journal of semiconductors, 2011, 卷号: 32, 期号: 5, 页码: 54007
Lai, Weijiang
;
Cheng, Yuanbing
;
Yao, Chen
;
Zhou, Daibing
;
Bian, Jing
;
Zhao, Lingjuan
;
Wu, Jian
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Diodes
High power lasers
Interferometers
Power electronics
Semiconductor diodes
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
期刊论文
OAI收割
optics express, OPTICS EXPRESS, 2011, 2011, 卷号: 19, 19, 期号: 2, 页码: 1065-1071, 1065-1071
作者:
Wei TB
;
Kong QF
;
Wang JX
;
Li J
;
Zeng YP
  |  
收藏
  |  
浏览/下载:43/4
  |  
提交时间:2011/07/05
OUTPUT
ENHANCEMENT
Output
Enhancement
Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 1, 页码: 014011-1-014011-3, 014011-1-014011-3
作者:
Lu Pengzhi
;
Yang Hua
;
Wang Guohong
  |  
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2011/08/16
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:
Wei TB
;
Yang JK
;
Hu Q
;
Duan RF
;
Huo ZQ
  |  
收藏
  |  
浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Cl
Pl
Stacking Fault
Hvpe
Gan
Nonpolar
Chemical-vapor-deposition
Acceptor Pair Emission
Phase Epitaxy
Grown Gan
Semiconductors
Sapphire
Films
Nitride