中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
  • 半导体研究所 [103]
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共103条,第1-10条 帮助

限定条件                
条数/页: 排序方式:
Long wavelength infrared inas/gasb superlattice photodetectors with insb-like and mixed interfaces 期刊论文  iSwitch采集
Ieee journal of quantum electronics, 2011, 卷号: 47, 期号: 12, 页码: 1475-1479
作者:  
Zhang, Yanhua;  Ma, Wenquan;  Cao, Yulian;  Huang, Jianliang;  Wei, Yang
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文  iSwitch采集
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  
Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
First-principles study of magnetic properties in mo-doped graphene 期刊论文  iSwitch采集
Journal of physics-condensed matter, 2011, 卷号: 23, 期号: 34, 页码: 6
作者:  
Kang, Jun;  Deng, Hui-Xiong;  Li, Shu-Shen;  Li, Jingbo
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文  OAI收割
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:16/0  |  提交时间:2010/12/28
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载:64/6  |  提交时间:2011/07/05
Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix 期刊论文  OAI收割
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 64322
Rui YJ; Li SX; Xu J; Song C; Jiang XF; Li W; Chen KJ; Wang QM; Zuo YH
收藏  |  浏览/下载:20/0  |  提交时间:2012/02/06
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文  OAI收割
applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan,
收藏  |  浏览/下载:16/0  |  提交时间:2012/06/14
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文  OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  
Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载:18/0  |  提交时间:2011/09/14
First-principles study of magnetic properties in Mo-doped graphene 期刊论文  OAI收割
journal of physics-condensed matter, JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 2011, 卷号: 23, 23, 期号: 34, 页码: 346001, 346001
作者:  
Kang J;  Deng HX;  Li SS;  Li JB;  Li, SSLi, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. jbli@semi.ac.cn
  |  收藏  |  浏览/下载:8/0  |  提交时间:2011/09/14
Broadband external cavity tunable quantum dot lasers with low injection current density 期刊论文  iSwitch采集
Optics express, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
作者:  
Lv, X. Q.;  Jin, P.;  Wang, W. Y.;  Wang, Z. G.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12