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Graphene composite anode for flexible polymer light emitting diode 会议论文  OAI收割
Beijing, China, October 9, 2014 - October 10, 2014
作者:  Luo, Wei;  Chen, Weimin;  Leng, Chongqian;  Huang, Deping;  Zhang, Yongna
  |  收藏  |  浏览/下载：19/0  |  提交时间：2018/03/16
Saturated deep-blue emitter based on a spiro[benzoanthracene-fluorene]-linked phenanthrene derivative for non-doped organic light-emitting diodes 会议论文  OAI收割
作者:  Liang, Houjie;  Wang, Xinxin;  Zhang, Xingye;  Liu, Zhiyang;  Ge, Ziyi
  |  收藏  |  浏览/下载：6/0  |  提交时间：2021/12/02
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode 会议论文  OAI收割
2006
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：3/0  |  提交时间：2013/03/28
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文  OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong)
收藏  |  浏览/下载：470/18  |  提交时间：2010/03/29
Influence of precipitates on GaN epilayer quality 会议论文  OAI收割
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY; Huang QS; Wang ZG
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文  OAI收割
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Lei HB; Yang QQ; Ou HY; Wang QM
收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15
Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots 会议论文  OAI收割
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
作者:  Wang ZG;  Jiang DS
收藏  |  浏览/下载：66/0  |  提交时间：2010/11/15
MOCVD growth of cubic GaN: Materials and devices 会议论文  OAI收割
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Zhao DG;  Zhang SM
收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29
Preparation and characterization of erbium doped sol-gel silica glasses 会议论文  OAI收割
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX
收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29